English
Home > Products > Epitaxy

China Epitaxy Manufacturers, Suppliers, Factory

Our crew through skilled training. Skilled skilled knowledge, strong sense of company, to meet the company wants of customers for Epitaxy,SiC coating,SiC coated,CVD SiC coating,Epitaxial Growth, Created merchandise with brand price. We attend seriously to produce and behave with integrity, and via the favor of buyers at your house and overseas inside the xxx industry.
Epitaxy, Our company mission is that providing high quality and beautiful products with reasonable price and strive to gain 100% good reputation from our clients. We believe Profession achieves excellence! We welcome you to cooperate with us and grow up together.

Related Products

Hot Products

  • CVD Epitaxial Deposition In Barrel Reactor

    CVD Epitaxial Deposition In Barrel Reactor

    Semicorex CVD Epitaxial Deposition In Barrel Reactor is a highly durable and reliable product for growing epixial layers on wafer chips. Its high-temperature oxidation resistance and high purity make it suitable for use in the semiconductor industry. Its even thermal profile, laminar gas flow pattern, and prevention of contamination make it an ideal choice for high-quality epixial layer growth.
  • Ring Set

    Ring Set

    Unlock the full potential of your semiconductor epitaxial processes with Semicorex Ring Set – a crucial component crafted from SiC-coated graphite. Designed to elevate the efficiency and reliability of your epitaxial growth, this small yet powerful accessory plays a key role in ensuring optimal performance within semiconductor manufacturing environments.
  • Single-crystal Silicon Epi Susceptor

    Single-crystal Silicon Epi Susceptor

    The Single-crystal Silicon Epi Susceptor is an essential component designed for Si-GaN epitaxy processes, which can be tailored to individualized specifications and preferences, providing a bespoke solution that aligns perfectly with specific requirements. Whether it entails modifications in dimensions or adjustments in coating thickness, we possess the capability to design and deliver a product that accommodates diverse process parameters, thereby optimizing performance for targeted applications. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
  • Wafer Carrier for MOCVD

    Wafer Carrier for MOCVD

    the Semicorex Wafer Carrier for MOCVD, Crafted for the precise needs of Metal Organic Chemical Vapor Deposition (MOCVD), emerges as an indispensable tool in the processing of single-crystal Si or SiC for high-scale integrated circuits. The Wafer Carrier for MOCVD composition boasts unparalleled purity, resistance to elevated temperatures and corrosive environments, and superior sealing properties to maintain a pristine atmosphere. We at Semicorex are dedicated to manufacturing and supplying high-performance Wafer Carriers for MOCVD that fuse quality with cost-efficiency.
  • TaC-coated Halfmoon

    TaC-coated Halfmoon

    Semicorex TaC-coated Halfmoon offers compelling advantages in the epitaxial growth of silicon carbide (SiC) for power electronics and RF applications. This material combination addresses critical challenges in SiC epitaxy, enabling higher wafer quality, improved process efficiency, and reduced manufacturing costs. We at Semicorex are dedicated to manufacturing and supplying high-performance TaC-coated Halfmoon that fuses quality with cost-efficiency.**
  • Satellite Plate

    Satellite Plate

    Semicorex Satellite Plate is a critical component used in semiconductor epitaxy reactors, specifically designed for Aixtron G5+ equipment. Semicorex combines advanced material expertise with cutting-edge coating technology to deliver reliable, high-performance solutions tailored for demanding industrial applications.*
  • Related Blog
  • Reviews

  • What is the process of SiC epitaxial?

    In the high voltage field, particularly for high-voltage devices above 20,000V, the SiC epitaxial technology still faces several challenges. One of the main difficulties is achieving high uniformity, thickness, and doping concentration in the epitaxial layer. For the fabrication of such high-voltage devices, a 200um thick silicon carbide epitaxial wafer with excellent uniformity and concentration is required.

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • What is the process of isostatic graphite manufacturing?

    The process of isostatic graphite manufacturing is Selecting raw materials, Blending, Molding, Isostatic pressing, Carbonization, Graphitization. 

  • TaC coating with CVD method

    Tantalum carbide coating is an important high-strength, corrosion-resistant and chemically stable high-temperature structural material with a melting point of up to 4273 °C, one of the several compounds with the highest temperature resistance. It has excellent high-temperature mechanical properties, resistance to high-speed airflow scouring, ablation resistance, and good chemical and mechanical compatibility with graphite and carbon/carbon composites. Therefore, in the epitaxial process of GaN LEDs and SiC power devices such as MOCVD, TaC coating has excellent acid and alkali resistance to H2, HCl, NH3, which can completely protect the graphite substrate material and purify the growth environment.

  • Substrate vs. Epitaxy: Key Roles in Semiconductor Manufacturing

    ​In the realms of semiconductor technology and microelectronics, the concepts of substrates and epitaxy hold significant importance. They play critical roles in the manufacturing process of semiconductor devices. This article will delve into the differences between semiconductor substrates and epitaxy, covering their definitions, functions, material structures, and application areas.

  • Thin film growth process

    Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

Related Search

asm epitaxyBarrel Reactor EpitaxyBatch Reactor EpitaxyBlue Green LED EpitaxyCarrier SIC Epitaxycvd epitaxycvd epitaxy;epitaxy;density graphite;cvd sic coating;sic epitaxy equipment;gan on sic;gan on silicon;wafer carrier;MOCVD;epitaxial waferEpitaxy Equipmentepitaxy filmepitaxy furnaceEpitaxy GrowthEpitaxy IC FabricationEpitaxy In Vlsiepitaxy mocvdepitaxy of semiconductorsepitaxy reactorEpitaxy ReactorsEpitaxy RTPRTA CarrierEpitaxy SemiconductorEpitaxy Semiconductor ManufacturingEpitaxy Silicon-Based GaNEpitaxy SusceptorEpitaxy Susceptorsepitaxy typesEpitaxy Waferfor Current Epitaxy ReactorsGaN EpitaxyHydride Vapor Phase EpitaxyIC Single-Crystal Silicon Epitaxyicp etch;Epitaxy Etch Carrier ICP PSS;Etch Carrier ICP PSS Gear Ring;SiC ceramic;silicon carbide part;ICP Etch System;Etching process;SiC plate;RBSiC;SSiCLED Epitaxy WaferLiquid Phase EpitaxyLiquid Phase Epitaxy (LPE) Reactor SystemLPE Epitaxylpe sic epitaxymbe epitaxyMOCVD Epitaxymolecular beam epitaxy methodmolecular epitaxyporous graphite;TaC coating;Tantalum Carbide;Tantalum carbide coated;TaC Coated Components;cvd coating;graphite part;silicon carbide epitaxy;semiconductor component;Semiconductor Epitaxysi epitaxySiC Coating for GaN EpitaxySIC Epitaxysic epitaxy equipmentSIC Epitaxy ProcessSIC Epitaxy Silicon-BasedSiC-Coated Susceptor for GaN EpitaxySilicon and SIC EpitaxySilicon Based EpitaxySilicon Based Gan EpitaxySilicon Carbide EpitaxySilicon Carbide Epitaxy SusceptorSilicon Epitaxy RTP RTASilicon Epitaxy SusceptorSilicon Epitaxy SusceptorsSilicon-Based GaN EpitaxySingle Crystal Silicon EpitaxySingle-Crystal Silicon EpitaxySinlicon EpitaxySusceptor for Epitaxy ReactorsSusceptors for Silicon Epitaxytantalum carbide tac;tac coating on graphite;graphite porosity;porous tantalum carbide;tantalum carbide coating;SiC epitaxy;porous graphite;porous specialty graphite;CVD TaC;wafer processtantalum carbon;TaC;epitaxial growth;tantalum carbide coating;;wafer carrier;wafer carriers semiconductor;wafer holder;sic epitaxy;LPE;UV LED Chip EpitaxyVapour Phase Epitaxy In VlsiVapour Phase Epitaxy ProcessWafer Epitaxywafer epitaxy;

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept