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SiC Coated MOCVD Susceptor

SiC Coated MOCVD Susceptor

Semicorex is a leading manufacturer and supplier of SiC Coated MOCVD Susceptor. Our product is specially designed for semiconductor industries to grow the epitaxial layer on the wafer chip. The high purity Silicon Carbide coated graphite carrier is used as the center plate in MOCVD, with a gear or ring-shaped design. Our susceptor is widely used in MOCVD equipment, ensuring high heat and corrosion resistance, and great stability in extreme environments.

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Product Description

One of the most significant features of our SiC Coated MOCVD Susceptor is that it ensures coating on all surface, avoiding peeling off. The product has high-temperature oxidation resistance, which is stable at high temperatures up to 1600°C. The high purity is achieved by using CVD chemical vapor deposition under high-temperature chlorination conditions. The product has a dense surface with fine particles, making it highly resistant to corrosion from acid, alkali, salt, and organic reagents.
Our SiC Coated MOCVD Susceptor ensures the best laminar gas flow pattern, which guarantees evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip. Semicorex offers a competitive price advantage and covers many of the European and American markets. Our team is dedicated to providing excellent customer service and support. We are committed to becoming your long-term partner, providing high-quality and reliable products to help your business grow.


Parameters of SiC Coated MOCVD Susceptor

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of SiC Coated MOCVD Susceptor

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion




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