ALD Planetary Susceptor

Applications:

High-k dielectric deposition: The ALD Planetary Susceptor shows excellent resistance to aggressive precursors used in depositing high-k dielectric materials like hafnium oxide (HfO2) and aluminum oxide (Al2O3). This makes the ALD Planetary Susceptor suitable for fabricating high-performance transistors for logic and memory applications.

Metallization layers: The ALD Planetary Susceptor’s high-temperature stability allows for deposition of metallization layers at elevated temperatures, leading to improved film properties like lower resistivity and higher density. This is crucial for creating efficient interconnects in advanced semiconductor devices.

Optoelectronic device fabrication: The inert nature of the ALD Planetary Susceptor minimizes unwanted reactions with precursors used in depositing sensitive materials like III-V semiconductors, making the ALD Planetary Susceptor a perfect fit for manufacturing LEDs, lasers, and other optoelectronic components.

ALD Cycle

Atomic Layer Deposition (ALD) offers several key advantages over other thin-film deposition techniques, making it increasingly popular for various applications, particularly in microelectronics and nanotechnology.

Here are some of the key advantages of ALD:

1. Angstrom-Level Thickness Control:

ALD allows for precise control of film thickness down to the angstrom level (0.1 nanometers). This level of precision is achieved through its self-limiting surface reactions, where each cycle deposits a single atomic layer.

2. Excellent Uniformity and Conformality:

ALD exhibits exceptional uniformity over large surface areas and complex 3D structures, including high aspect ratio features like trenches and vias. This is crucial for applications requiring uniform coatings on intricate geometries, such as in semiconductor devices.

3. Low Deposition Temperature:

ALD can be performed at relatively low temperatures (often below 300°C) compared to other deposition techniques. This is advantageous for heat-sensitive substrates and enables the use of a wider range of materials.

4. High-Quality Films:

ALD typically produces films with excellent density, low impurity levels, and high uniformity in composition and thickness. These characteristics are essential for achieving optimal performance in various applications.

5. Wide Material Selection:

ALD offers a wide selection of materials that can be deposited, including oxides, nitrides, metals, and sulfides. This versatility makes it suitable for a wide range of applications.

6. Scalability and Industrial Applicability:

ALD technology is highly scalable and can be readily integrated into existing manufacturing processes. It is compatible with various substrate sizes and shapes, making it suitable for high-volume production.