English
Home > Products > cvd sic

China cvd sic Manufacturers, Suppliers, Factory

We always follow the principle "Quality Very first, Prestige Supreme". We have been fully committed to delivering our customers with competitively priced high-quality products and solutions, prompt delivery and experienced services for cvd sic,mocvd reactor,cvd mocvd,waferholder,wafer susceptor, We guaranteed high-quality, if clients were not pleased together with the products' good quality, you can return inside of 7days with their original states.
cvd sic, We have constructed strong and long co-operation relationship with an enormous quantity of companies within this business overseas. Immediate and specialist after-sale service supplied by our consultant group has happy our buyers. Detailed Info and parameters from the merchandise will probably be sent to you for any thorough acknowledge. Free samples may be delivered and company check out to our corporation. n Portugal for negotiation is constantly welcome. Hope to get inquiries type you and construct a long-term co-operation partnership.

Related Products

Hot Products

  • Porous Ceramic Chuck

    Porous Ceramic Chuck

    Semicorex Porous Ceramic Chuck (Vacuum Chuck) is a high-precision tool designed to securely hold wafers during semiconductor manufacturing processes. By choosing Semicorex, you benefit from a solution that offers exceptional performance, durability, and customization options, ensuring enhanced production efficiency and consistent quality standards.*
  • High-Temperature SiC-Coated Barrel Susceptor

    High-Temperature SiC-Coated Barrel Susceptor

    When it comes to semiconductor manufacturing, the Semicorex High-Temperature SiC-Coated Barrel Susceptor is the top choice for superior performance and reliability. Its high-quality SiC coating and exceptional thermal conductivity make it ideal for use in even the most demanding high-temperature and corrosive environments.
  • AIN Substrate

    AIN Substrate

    Semicorex’s AIN Substrate excels in superior thermal management and electrical isolation, providing a robust solution crafted from high-purity AlN ceramics. This white ceramic material is lauded for its comprehensive properties.**
  • MOCVD Epitaxy Susceptor

    MOCVD Epitaxy Susceptor

    Semicorex MOCVD Epitaxy Susceptor has emerged as a critical component in Metal-Organic Chemical Vapor Deposition (MOCVD) epitaxy, enabling the fabrication of high-performance semiconductor devices with exceptional efficiency and precision. Its unique combination of material properties makes it perfectly suited for the demanding thermal and chemical environments encountered during epitaxial growth of compound semiconductors.**
  • ICP Etching Carrier Plate

    ICP Etching Carrier Plate

    Semicorex's ICP Etching Carrier Plate is the perfect solution for demanding wafer handling and thin film deposition processes. Our product provides superior heat and corrosion resistance, even thermal uniformity, and laminar gas flow patterns. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • Barrel Susceptor Silicon Carbide Coated Graphite

    Barrel Susceptor Silicon Carbide Coated Graphite

    Semicorex Barrel Susceptor Silicon Carbide Coated Graphite is a specialized component designed for use in the epitaxy process, particularly in carrying wafers. Contact us today to learn more about how we can help you with your semiconductor wafer processing needs.
  • Related Blog
  • Reviews

  • The Study on the Distribution of Electrical Resistivity in n-Type 4H-SiC Crystals

    4H-SiC, as a third-generation semiconductor material, is renowned for its wide bandgap, high thermal conductivity, and excellent chemical and thermal stability, making it highly valuable in high-power and high-frequency applications.

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • What is SiC epitaxy?

    Silicon Carbide (SiC) epitaxy is a key technology in the field of semiconductors, particularly for the development of high-power electronic devices. SiC is a compound semiconductor with a wide bandgap, which makes it ideal for applications that require a high-temperature and high-voltage operation.

  • What is C/C composite?

    C/C composite is a carbon-carbon composite material made of carbon fibers as reinforcement and carbon as matrix through processing and carbonization, with excellent mechanical and high-temperature resistance properties. The material was initially used in aerospace and special fields, and with the maturity of the technology, it has been gradually used in photovoltaic, automotive, lithium battery, medical devices and other fields.

  • About Semiconductor Heating Elements

    Heat treatment is one of the essential and important processes in the semiconductor process. Thermal process is the process of applying thermal energy to a wafer by placing it in an environment filled with a specific gas, including oxidation/diffusion/annealing, etc.

Related Search

cvd epitaxy;epitaxy;density graphite;cvd sic coating;sic epitaxy equipment;gan on sic;gan on silicon;wafer carrier;MOCVD;epitaxial waferCVD SiCCVD Sic Coated Ceramic ArmCVD SiC Coated GraphiteCVD Sic Coated Wafer BafflesCVD SiC CoatingCVD SiC coating PlateCVD SiC Coating SusceptorCVD SiC Processcvd sic process;rbsic material;al2o3 sic composite ceramic;carbide ceramic;sintered silicon carbide;recrystallized silicon carbide;ceramic bearings;ball bearing;magnetic drive pump;density siccvd sic ringCVD SiC Shower headCVD Sic Wafer BoatsCVD SiC Wafer Carriericp etch;icp rie;silicon carbide susceptor;wafer carrier;dry etch;cvd sic coating;high purity graphite;graphite susceptor;wafer processing;wafer fabicp etching;icp plasma etching;icp etching process;icp etcher;dry etch;dry etching technology for semiconductors;wafer disc;wafer tray;cvd sic coating;dry etcher;Isostatic Graphite;heating element;heating rod;high purity graphite;graphite heater;SiC Heater;CVD SiC;SiC coating;CVD furnace;vacuum furnaceRBSiC;SSiC;wafer inspection;sic ceramic;CVD SiC;wafer inspection tools;wafer processing;semiconductor manufacturing process;high purity SiC;RBSiCsic boat;wafer diffusion;RBSiC;SSiC;diffusion furnace semiconductor;wafer boat;wafer carrier;annealing in semiconductor fabrication;photovoltaic;CVD SiCSSiC;recrystallized silicon carbide;sic ceramic;high purity silicon carbide;cvd sic process;high vacuum o rings;o ring for vacuum sealing;o ring semiconductor;mechanical seal;sintered sic;wafer boat;wafer diffusion;horizontal diffusion furnace;;RBSiC;SSiC;sic ceramic;silicon carbide company;cvd sic process;wafer carrier;

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept