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Inductively Heated Barrel Epi System

Inductively Heated Barrel Epi System

If you need a graphite susceptor with exceptional thermal conductivity and heat distribution properties, look no further than the Semicorex Inductively Heated Barrel Epi System. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments, making it the ideal choice for use in semiconductor manufacturing applications.

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Product Description

The Semicorex Inductively Heated Barrel Epi System is the perfect choice for semiconductor manufacturing applications that require exceptional heat distribution and thermal conductivity. Its high-purity SiC coating and superior density provide superior protection and heat distribution properties, ensuring reliable and consistent performance in even the most challenging environments.
At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our Inductively Heated Barrel Epi System has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.


Parameters of Inductively Heated Barrel Epi System

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of Inductively Heated Barrel Epi System

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.




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