If you need a graphite susceptor with exceptional thermal conductivity and heat distribution properties, look no further than the Semicorex Inductively Heated Barrel Epi System. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments, making it the ideal choice for use in semiconductor manufacturing applications.
The Semicorex Inductively Heated Barrel Epi System is the perfect choice for semiconductor manufacturing applications that require exceptional heat distribution and thermal conductivity. Its high-purity SiC coating and superior density provide superior protection and heat distribution properties, ensuring reliable and consistent performance in even the most challenging environments.
At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our Inductively Heated Barrel Epi System has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.
Parameters of Inductively Heated Barrel Epi System
Main Specifications of CVD-SIC Coating |
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SiC-CVD Properties |
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Crystal Structure |
FCC β phase |
|
Density |
g/cm ³ |
3.21 |
Hardness |
Vickers hardness |
2500 |
Grain Size |
μm |
2~10 |
Chemical Purity |
% |
99.99995 |
Heat Capacity |
J·kg-1 ·K-1 |
640 |
Sublimation Temperature |
℃ |
2700 |
Felexural Strength |
MPa (RT 4-point) |
415 |
Young’ s Modulus |
Gpa (4pt bend, 1300℃) |
430 |
Thermal Expansion (C.T.E) |
10-6K-1 |
4.5 |
Thermal conductivity |
(W/mK) |
300 |
Features of Inductively Heated Barrel Epi System
- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.
- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.
- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- High melting point, high temperature oxidation resistance, corrosion resistance.