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SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber

Semicorex's SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber is a highly reliable solution for semiconductor manufacturing processes, featuring superior heat distribution and thermal conductivity properties. It is also highly resistant to corrosion, oxidation, and high temperatures.

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Product Description

Semicorex's SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber is a premium quality product, manufactured to the highest standards of precision and durability. It offers excellent thermal conductivity, corrosion resistance, and is highly suited to most epitaxial reactor in semiconductor manufacturing.
Our SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber.

Parameters of SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.