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SiGe and Si Selective Etching Technology

A critical step in the fabrication of n-type GAAFETs involves the high-selectivity etching of SiGe:Si stacks prior to the deposition of inner spacers, generating silicon nanosheets and releasing channels.

SiGe in Chip Manufacturing: A Professional News Report

To meet the demands for high performance and low power consumption in the realm of modern semiconductor technology, SiGe (Silicon Germanium) has emerged as a composite material of choice in semiconductor chip manufacturing due to its unique physical and electrical properties.

The unit in semiconductor: Angstrom

As a unit of length, Angstrom (Å) is ubiquitous in integrated circuit manufacturing. From precise control of material thickness to miniaturization and optimization of device size, the understanding and application of Angstrom scale is the core to ensure the continuous development of semiconductor te......

Synthesizing High-Purity Silicon Carbide Powder

High-Purity Silicon Carbide Powder features exceptional wide bandgap characteristics, which make it an ideal material for manufacturing high-frequency, high-power electronic devices.

Nearly $840 Million: Onsemi Acquires a SiC Company

Today, Onsemi announced on its official website that it has reached an agreement with Qorvo to acquire the SiC JFET technology business and Qorvo's subsidiary.

What is the Difference Between Graphitization and Carbonization

In conclusion, both graphitization and carbonization are industrial processes that involve carbon either as a reactant or a product. Carbonization refers to the process of converting organic matter into carbon, while graphitization involves transforming carbon into graphite. Therefore, carbonization......

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