High-Temperature SiC-Coated Barrel Susceptor

When it comes to semiconductor manufacturing, the Semicorex High-Temperature SiC-Coated Barrel Susceptor is the top choice for superior performance and reliability. Its high-quality SiC coating and exceptional thermal conductivity make it ideal for use in even the most demanding high-temperature and corrosive environments.

Send Inquiry

Product Description

The Semicorex High-Temperature SiC-Coated Barrel Susceptor is the perfect choice for single crystal growth and other semiconductor manufacturing applications that require high heat and corrosion resistance. Its silicon carbide coating provides superior protection and heat distribution properties, ensuring reliable and consistent performance in even the most challenging environments.

At Semicorex, we focus on providing high-quality, cost-effective high-temperature SiC-coated barrel susceptor, we prioritize customer satisfaction and provide cost-effective solutions. We look forward to becoming your long-term partner, delivering high-quality products and exceptional customer service.

Parameters of High-Temperature SiC-Coated Barrel Susceptor

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of High-Temperature SiC-Coated Barrel Susceptor

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.