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  • CVD SiC coating Plate

    • China CVD SiC coating Plate Manufacturers, Suppliers, Factory

    Semicorex has been producing CVD SiC coating Plate for many years and is one of the professional CVD SiC coating Plate manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Wafer Vacuum Chuck

      Wafer Vacuum Chuck

      Perfect for next-generation lithography and wafer-handling applications, Semicorex ultra-pure ceramic components ensure minimal contamination and provide exceptionally long life performance. Our Wafer Vacuum Chuck has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • Ga2O3 Epitaxy

      Ga2O3 Epitaxy

      Step into a new era of semiconductor excellence with Semicorex Ga2O3 Epitaxy, a groundbreaking solution that redefines the boundaries of power and efficiency. Engineered with precision and innovation, Ga2O3 epitaxy offers a platform for next-generation devices, promising unmatched performance across various applications.
    • Reinforced Carbon–Carbon Composite

      Reinforced Carbon–Carbon Composite

      As the professional manufacturer, we would like to provide you high quality Reinforced Carbon–Carbon Composite. Semicorex provide high-quality reinforced carbon-carbon composite with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • ZrO2 Crucible

      ZrO2 Crucible

      Semicorex ZrO2 Crucible is crafted from stabilized zirconia ceramic, presenting a standard composition of 94.7% zirconium dioxide (ZrO2) and 5.2% yttrium oxide (Y2O3) by weight percentage, or alternatively, 97% ZrO2 and 3% Y2O3 by mol percentage. This precise formulation endows the ZrO2 Crucible with a suite of advantageous characteristics that cater specifically to the demands of high-performance industrial processes.**
    • Inductively Heated Barrel Epi System

      Inductively Heated Barrel Epi System

      If you need a graphite susceptor with exceptional thermal conductivity and heat distribution properties, look no further than the Semicorex Inductively Heated Barrel Epi System. Its high-purity SiC coating provides superior protection in high-temperature and corrosive environments, making it the ideal choice for use in semiconductor manufacturing applications.
    • Solar Graphite Boat for PECVD

      Solar Graphite Boat for PECVD

      Semicorex provide high-quality Solar Graphite Boat for PECVD with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • Thermal field insulation material

      The process of monocrystalline silicon growth predominantly occurs within a thermal field, where the quality of the thermal environment significantly impacts crystal quality and growth efficiency. The design of the thermal field plays a pivotal role in shaping temperature gradients and gas flow dynamics within the furnace chamber. Furthermore, the materials used in constructing the thermal field directly influence its lifespan and performance.

    • Monocrystalline silicon vs. polycrystalline silicon

      Single crystal silicon and polycrystalline silicon each have their own unique advantages and applicable scenarios. Single crystal silicon is suitable for high-performance electronic products and microelectronics due to its excellent electrical and mechanical properties. Polycrystalline silicon, on the other hand, dominates the field of solar cells due to its low cost and good photoelectric conversion efficiency.

    • Difficulties in GaN preparation

      As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

    • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

      Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

    • What is the diffusion furnace?

      A diffusion furnace is a specialized piece of equipment used to introduce impurities into semiconductor wafers in a controlled manner. These impurities, called dopants, change the electrical properties of semiconductors, allowing different types of electronic components to be made. This controlled diffusion process is critical to the production of transistors, diodes and integrated circuits.

    • Analyzing the Applications and Development Prospects of SiC Ceramics in the Semiconductor and Photovoltaic Sectors

      Silicon carbide (SiC), as an important high-end ceramic material, has excellent properties such as high-temperature resistance, corrosion resistance, wear resistance, high-temperature mechanical strength, and oxidation resistance. These properties make it highly promising for applications in high-tech fields such as semiconductors, nuclear energy, defense, and space technology.

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