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ICP Etching Carrier Plate

ICP Etching Carrier Plate

Semicorex's ICP Etching Carrier Plate is the perfect solution for demanding wafer handling and thin film deposition processes. Our product provides superior heat and corrosion resistance, even thermal uniformity, and laminar gas flow patterns. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.

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Product Description

Semicorex's ICP Etching Carrier Plate provides excellent durability and longevity for wafer handling and thin film deposition processes. Our product boasts superior heat and corrosion resistance, even thermal uniformity, and laminar gas flow patterns. With a clean and smooth surface, our carrier ensures optimal handling of pristine wafers. Withdraw high temperature, chemical cleaning, as well as high thermal uniformity.
Contact us today to learn more about our ICP Etching Carrier Plate.


Parameters of ICP Etching Carrier Plate

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of ICP Etching Carrier Plate

- Avoid peeling off and ensure coating on all surface

High temperature oxidation resistance: Stable at high temperatures up to 1600°C

High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.

Corrosion resistance: high hardness, dense surface and fine particles.

Corrosion resistance: acid, alkali, salt and organic reagents.

- Achieve the best laminar gas flow pattern

- Guarantee evenness of thermal profile

- Prevent any contamination or impurities diffusion





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