ICP Plasma Etching System for PSS Process

Choose Semicorex's ICP Plasma Etching System for PSS Process for high-quality epitaxy and MOCVD processes. Our product is engineered specifically for these processes, offering superior heat and corrosion resistance. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.

Send Inquiry

Product Description

Semicorex's ICP Plasma Etching System for PSS Process provides excellent heat and corrosion resistance for wafer handling and thin film deposition processes. Our fine SiC crystal coating offers a clean and smooth surface, ensuring optimal handling of pristine wafers.

At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our ICP plasma etching system for PSS process has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.

Parameters of ICP Plasma Etching System for PSS Process

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300