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    • China Silicon Carbide Plates Manufacturers, Suppliers, Factory

    Semicorex has been producing Silicon Carbide Plates for many years and is one of the professional Silicon Carbide Plates manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Quartz Wafer Carrier

      Quartz Wafer Carrier

      Semicorex Quartz Wafer Carrier, designed to exceed industry standards and optimize your production processes. This meticulously crafted carrier is engineered with precision and reliability to meet the exacting demands of the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Porous Carbon

      Porous Carbon

      Semicorex porous carbon, is an advanced high-purity material on semiconductor processing. This crucial piece of equipment plays a pivotal role in the process of single crystal SiC growth. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Crucible for Monocrystalline Silicon

      Crucible for Monocrystalline Silicon

      Semicorex is committed to manufacturing and supplying Crucible for Monocrystalline Silicon that features exceptional purity, superior thermal properties, mechanical strength, and compatibility with established growth methods, making it indispensable for meeting the stringent demands of the electronics and solar industries.**
    • Silicon Carbide Coating Graphite Susceptor for MOCVD

      Silicon Carbide Coating Graphite Susceptor for MOCVD

      Semicorex is a trusted supplier and manufacturer of silicon carbide coating graphite susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
    • Silicon Carbide Cantilever Paddle

      Silicon Carbide Cantilever Paddle

      Semicorex silicon carbide cantilever paddle is a specialized component used in furnaces for various thermal processing applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC Wafer Tray

      SiC Wafer Tray

      The Semicorex SiC Wafer Tray is a vital asset in the Metal-Organic Chemical Vapor Deposition (MOCVD) process, meticulously designed to support and heat semiconductor wafers during the essential step of epitaxial layer deposition. This tray is integral to semiconductor device manufacturing, where the precision of layer growth is of utmost importance. We at Semicorex are dedicated to manufacturing and supplying high-performance SiC Wafer Tray that fuse quality with cost-efficiency.
    • Related Blog
    • Reviews

    • Isostatic Graphite Production Technology

      Isostatic pressing technology is a critical process in the manufacturing of isostatic graphite, largely determining the performance of the final product. As such, comprehensive research and optimization of isostatic graphite production remain essential focal points in the industry.

    • Silicon Carbide(SiC) Crystal Growth Furnace

      Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

    • 4th Generation Semiconductors Gallium Oxide/β-Ga2O3

      The first generation of semiconductor materials is mainly represented by silicon (Si) and germanium (Ge), which began to rise in the 1950s. Germanium was dominant in the early days and was mainly used in low-voltage, low-frequency, medium-power transistors and photodetectors, but due to its poor high temperature resistance and radiation resistance, it was gradually replaced by silicon devices in the late 1960s. Silicon is still the main semiconductor material in the field of microelectronics due to its high technological maturity and cost advantages.

    • What are epitaxial wafers used for?

      Epitaxial wafers have been used in the electronics industry for decades, but their importance has only increased as technology has advanced. In this article, we will explore what epitaxial wafers are and why they are such an essential component of modern electronics.

    • Oxidation Process

      The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

    • Achieving High-Quality SiC Crystal Growth through Temperature Gradient Control in the Initial Growth Phase

      Silicon carbide (SiC) is a wide-bandgap semiconductor material that has garnered significant attention in recent years due to its exceptional performance in high-voltage and high-temperature applications. This study systematically explores the various characteristics of SiC crystals grown using modified process conditions.

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