High-Temperature SiC Coating for Plasma Etch Chambers

When it comes to wafer handling processes such as epitaxy and MOCVD, Semicorex's High-Temperature SiC Coating for Plasma Etch Chambers is the top choice. Our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance thanks to our fine SiC crystal coating.

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Product Description

At Semicorex, we understand the importance of high-quality wafer handling equipment. That's why our high-temperature SiC coating for plasma etch chambers is engineered specifically for high-temperature and harsh chemical cleaning environments. Our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
Contact us today to learn more about our High-Temperature SiC Coating for Plasma Etch Chambers.

Parameters of High-Temperature SiC Coating for Plasma Etch Chambers

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300