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China SiC Carrier for Etching Plasma Etching Manufacturers, Suppliers, Factory

Semicorex has been producing SiC Carrier for Etching Plasma Etching for many years and is one of the professional SiC Carrier for Etching Plasma Etching manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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  • MOCVD Susceptor with TaC Coating

    MOCVD Susceptor with TaC Coating

    Semicorex MOCVD Susceptor with TaC Coating is a cutting-edge component meticulously crafted for optimum performance in semiconductor epitaxy processes within MOCVD systems. Semicorex is unwavering in our commitment to delivering superior products at highly competitive prices. We are eager to establish a lasting partnership with you in China.*
  • Seal Ring

    Seal Ring

    Semicorex provide high-quality Seal Ring with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Fused Quartz Ring

    Fused Quartz Ring

    The Fused Quartz Ring from Semicorex is a critical component designed specifically for the semiconductor etching process with exceptional purity, thermal stability, and chemical resistance. **
  • SiC Coating Graphite Substrate Wafer Carriers for MOCVD

    SiC Coating Graphite Substrate Wafer Carriers for MOCVD

    You can rest assured to buy SiC Coating Graphite Substrate Wafer Carriers for MOCVD from our factory. At Semicorex, we are a large-scale manufacturer and supplier of SiC Coated Graphite Susceptor in China. Our product has a good price advantage and covers many of the European and American markets. We strive to provide our customers with high-quality products that meet their specific requirements. Our SiC Coating Graphite Substrate Wafer Carrier for MOCVD is an excellent choice for those looking for a high-performance carrier for their semiconductor manufacturing process.
  • CVD SiC Pancake Susceptor

    CVD SiC Pancake Susceptor

    Unleash the pinnacle of precision in semiconductor manufacturing with our cutting-edge CVD SiC Pancake Susceptor. This disc-shaped component, expertly designed for semiconductor equipment, serves as a crucial element for supporting thin semiconductor wafers during high-temperature epitaxial deposition processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD SiC Etching Ring Silicon Carbide

    CVD SiC Etching Ring Silicon Carbide

    Semicorex provide high-quality CVD SiC Etching Ring Silicon Carbide with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
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  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Can you grind silicon carbide?

    Silicon carbide (SiC) has important applications in areas such as power electronics, high-frequency RF devices, and sensors for high-temperature-resistant environments due to its excellent physicochemical properties. However, the slicing operation during SiC wafer processing introduces damages on the surface, which, if left untreated, can expand during the subsequent epitaxial growth process and form epitaxial defects, thus affecting the yield of the device.

  • Nearly $840 Million: Onsemi Acquires a SiC Company

    Today, Onsemi announced on its official website that it has reached an agreement with Qorvo to acquire the SiC JFET technology business and Qorvo's subsidiary.

  • Porous Graphite for SiC Crystal Growth

    Currently, most SiC substrate manufacturers use a new crucible thermal field process design with porous graphite cylinders: placing high-purity SiC particle raw materials between the graphite crucible wall and the porous graphite cylinder, while deepening the entire crucible and increasing the crucible diameter.

  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • Released 850V High Power GaN HEMT Epitaxial Products

    In November 2023, Semicorex released 850V GaN-on-Si epitaxial products for high-voltage, high-current HEMT power device applications. Compared to other substrates for HMET power devices, GaN-on-Si enables larger wafer sizes and more diversified applications, and it can also be quickly introduced into the mainstream silicon chip process in fabs, which is a unique advantage for improving the yield of power devices.

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