Wafer Susceptor

Semicorex Wafer Susceptor is expertly crafted from graphite and coated with silicon carbide (SiC) to meet the demanding conditions of modern semiconductor manufacturing.

In epitaxy processes, maintaining a stable and controlled environment is absolutely essential. The Wafer Susceptor serves as the foundational platform upon which wafers are placed during deposition, meeting precise requirements for temperature uniformity, chemical inertness, and mechanical strength to achieve high-quality epitaxial layers.

The choice of graphite as the base material for the Wafer Susceptor is driven by its excellent thermal conductivity and mechanical properties. Graphite's ability to withstand high temperatures while maintaining structural integrity is crucial in the high-temperature environments of epitaxy reactors. Additionally, graphite's thermal conductivity ensures efficient heat distribution across the wafer, reducing the risk of temperature gradients that could lead to defects in the epitaxial layer.

To enhance the performance of the Wafer Susceptor, a silicon carbide (SiC) coating is expertly applied to the graphite base. SiC is a highly durable material with superior chemical resistance, making it ideal for use in semiconductor environments where reactive gases are often present. The SiC coating provides a protective barrier that shields the graphite from potential chemical reactions, ensuring the wafer susceptor's longevity and maintaining a clean environment within the reactor.

Semicorex Wafer Susceptor made of SiC-coated graphite is an indispensable component in semiconductor epitaxy processes. Its combination of graphite's thermal and mechanical properties with the chemical and thermal stability of silicon carbide makes it ideally suited for the rigorous demands of modern semiconductor manufacturing. The single-wafer design offers precise control over the epitaxy process, contributing to the production of high-quality semiconductor devices. This susceptor ensures that wafers are handled with the utmost care and precision, resulting in superior epitaxial layers and better-performing semiconductor products.