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China Silicon Carbide coating Manufacturers, Suppliers, Factory

We insist on offering high-quality output with superior small business concept, honest profits along with the best and fast service. it will bring you not only the top quality product and huge profit, but one of the most significant will be to occupy the endless market for Silicon Carbide coating,wafer carrier,wafer susceptor,epitaxial growth,wafer holder, We often hold the philosophy of win-win, and establish long-term cooperation connection with consumers from around the planet.We think that our expansion base on customer's achievement, credit rating is our daily life.
Silicon Carbide coating, For many years, we now have adhered to the principle of customer oriented, quality based, excellence pursuing, mutual benefit sharing. We hope, with great sincerity and good will, to have the honor to help with your further market.

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  • Inductively-Coupled Plasma (ICP)

    Inductively-Coupled Plasma (ICP)

    Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
  • Mechanical Seal Parts

    Mechanical Seal Parts

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Ceramic in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Mechanical Seal Parts have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Silicon Carbide Liner

    Silicon Carbide Liner

    Semicorex Silicon Carbide Liner is a versatile and robust material that serves as an invaluable asset in optimizing the efficiency and longevity of industrial processing equipment.
  • Ultra-Thin Graphite with High Porosity

    Ultra-Thin Graphite with High Porosity

    Semicorex Ultra-Thin Graphite with High Porosity is primarily utilized in the semiconductor industry, particularly in the single crystal growth process featuring excellent surface adhesion, superior heat resistance, high porosity and ultra-thin thickness with outstanding machinability. We at Semicorex are dedicated to manufacturing and supplying high-performance Ultra-Thin Graphite with High Porosity that fuse quality with cost-efficiency. **
  • PSS Handling Carrier for Wafer Transfer

    PSS Handling Carrier for Wafer Transfer

    Semicorex's PSS Handling Carrier for Wafer Transfer is engineered for the most demanding epitaxy equipment applications. Our ultra-pure graphite carrier can withstand harsh environments, high temperatures, and harsh chemical cleaning. The SiC coated carrier has excellent heat distribution properties, high thermal conductivity, and is cost-effective. Our products are widely used in many European and American markets, and we look forward to becoming your long-term partner in China.
  • Tantalum Carbide Coating Guide Ring

    Tantalum Carbide Coating Guide Ring

    Semicorex Tantalum Carbide Coating Guide Ring is an advanced component specifically designed for the semiconductor industry, playing a crucial role in the growth of Silicon Carbide (SiC) crystals. This product is engineered to meet the stringent demands of high-temperature and high-stress environments inherent in semiconductor crystal growth processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Related Blog
  • Reviews

  • 3 methods of graphite molding

    The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

  • What is graphitization degree?

    The degree of graphitization is an essential measure used to assess how close carbon atoms are to forming a tightly-packed hexagonal graphite crystal structure.

  • Introduction to Third-Generation Semiconductors: GaN and Related Epitaxial Technologies

    GaN materials gained prominence following the awarding of the 2014 Nobel Prize in Physics for blue LEDs. Initially entering the public eye through fast-charging applications in consumer electronics, GaN-based power amplifiers and RF devices have also quietly emerged as critical components in 5G base stations. In recent years, GaN-based automotive-grade power devices have shown promise, potentially opening new growth avenues for GaN material applications.

  • Methods of AlN Crystal Growth

    AlN, as third-generation semiconductor material, is not only an important blue light and ultraviolet light material, but also an important packaging, dielectric isolation and insulation material for electronic devices and integrated circuits, especially suitable for high-temperature and high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

  • What is Thermal Field?

    In the field of single crystal growth, the temperature distribution within the crystal growth furnace plays a critical role. This temperature distribution, commonly referred to as the thermal field, is a vital factor that influences the quality and characteristics of the crystal being grown. The thermal field can be categorized into two types: static and dynamic.

  • Method of GaN Crystal Growth

    When producing large-sized GaN single crystal substrates, HVPE is currently the best choice for commercialization. However, the back carrier concentration of the grown GaN cannot be precisely controlled.

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