SiC MOCVD Inner Segment

Semicorex SiC MOCVD Inner Segment is engineered for performance and reliability, providing a critical component for the demanding process of SiC epitaxy. By leveraging high-purity materials and advanced manufacturing techniques, the SiC MOCVD Inner Segment enables the growth of high-quality SiC epilayers essential for next-generation power electronics and other advanced semiconductor applications:

Material Advantages:

The SiC MOCVD Inner Segment is constructed using a robust and high-performance material combination:

Ultra-High Purity Graphite Substrate (Ash Content < 5 ppm): The graphite substrate provides a strong foundation for the cover segment. Its exceptionally low ash content minimizes contamination risks, ensuring the purity of the SiC epilayers during the growth process.

High-Purity CVD SiC Coating (Purity ≥ 99.99995%): A chemical vapor deposition (CVD) process is employed to apply a uniform, high-purity SiC coating onto the graphite substrate. This SiC layer provides superior resistance to the reactive precursors used in SiC epitaxy, preventing unwanted reactions and ensuring long-term stability.

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Performance Advantages in MOCVD Environments:

Exceptional High-Temperature Stability: The combination of high-purity graphite and CVD SiC provides outstanding stability at the elevated temperatures required for SiC epitaxy (typically above 1500°C). This ensures consistent performance and prevents warping or deformation over extended use.

Resistance to Aggressive Precursors: The SiC MOCVD Inner Segment exhibits excellent chemical resistance to the aggressive precursors, such as silane (SiH4) and trimethylaluminum (TMAl), commonly employed in SiC MOCVD processes. This prevents corrosion and ensures the long-term integrity of the cover segment.

Low Particle Generation: The smooth, non-porous surface of the SiC MOCVD Inner Segment minimizes particle generation during the MOCVD process. This is crucial for maintaining a clean process environment and achieving high-quality SiC epilayers free from defects.

Enhanced Wafer Uniformity: The uniform thermal properties of the SiC MOCVD Inner Segment, combined with its resistance to deformation, contribute to improved temperature uniformity across the wafer during epitaxy. This leads to more homogeneous growth and improved uniformity of the SiC epilayers.

Extended Service Life: The robust material properties and superior resistance to harsh process conditions translate to an extended service life for Semicorex SiC MOCVD Inner Segment. This reduces the frequency of replacements, minimizing downtime and lowering overall operating costs.