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SiC Coated MOCVD Graphite Satellite Platform

SiC Coated MOCVD Graphite Satellite Platform

Semicorex is a reputable supplier and manufacturer of SiC Coated MOCVD Graphite Satellite Platform. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.

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Product Description

One of the most significant features of our SiC Coated MOCVD Graphite Satellite Platform is its ability to ensure coating on all surface, avoiding peeling off. It has high-temperature oxidation resistance, ensuring stability even at high temperatures of up to 1600°C. The product is made with high purity through CVD chemical vapor deposition under high-temperature chlorination conditions. It has a dense surface with fine particles, making it highly resistant to corrosion from acid, alkali, salt, and organic reagents.
Our SiC Coated MOCVD Graphite Satellite Platform is designed to guarantee the best laminar gas flow pattern, ensuring evenness of thermal profile. It prevents any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip. We offer competitive pricing for our product, making it accessible to many customers. Our team is dedicated to providing excellent customer service and support. We cover many of the European and American markets, and we strive to become your long-term partner in providing high-quality and reliable SiC Coated MOCVD Graphite Satellite Platform. Contact us today to learn more about our product.


Parameters of SiC Coated MOCVD Graphite Satellite Platform

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of SiC Coated MOCVD Graphite Satellite Platform

- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.
- Achieve the best laminar gas flow pattern
- Guarantee evenness of thermal profile
- Prevent any contamination or impurities diffusion




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