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    • China Reaction Chamber Manufacturers, Suppliers, Factory

    Semicorex has been producing Reaction Chamber for many years and is one of the professional Reaction Chamber manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Durable SiC-Coated Barrel Susceptor

      Durable SiC-Coated Barrel Susceptor

      With its excellent density and thermal conductivity, the Semicorex Durable SiC-Coated Barrel Susceptor is the ideal choice for use in epitaxial processes and other semiconductor manufacturing applications. Its high-purity SiC coating provides superior protection and heat distribution properties, making it the go-to choice for reliable and consistent results.
    • Silicon Nitride Disk

      Silicon Nitride Disk

      Semicorex Silicon Nitride Disk represents a pinnacle of material science innovation, combining the exceptional properties of silicon and nitrogen into a versatile and robust disk-shaped form. Crafted through advanced manufacturing processes, this Silicon Nitride Disk embodies high thermal stability, superior mechanical strength, remarkable wear resistance, and excellent chemical inertness. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Ga2O3 Epitaxy

      Ga2O3 Epitaxy

      Step into a new era of semiconductor excellence with Semicorex Ga2O3 Epitaxy, a groundbreaking solution that redefines the boundaries of power and efficiency. Engineered with precision and innovation, Ga2O3 epitaxy offers a platform for next-generation devices, promising unmatched performance across various applications.
    • MOCVD 3x2’’ Susceptor

      MOCVD 3x2’’ Susceptor

      Semicorex MOCVD 3x2’’ Susceptor developed by Semicorex represents a pinnacle of innovation and engineering excellence, specifically tailored to meet the intricate demands of contemporary semiconductor manufacturing processes.**
    • ICP Plasma Etching Tray

      ICP Plasma Etching Tray

      Semicorex's ICP Plasma Etching Tray is engineered specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers provide even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.
    • Quartz 12” Boat

      Quartz 12” Boat

      Semicorex Quartz 12” Boat is an essential component in the semiconductor manufacturing process, designed specifically for the safe and efficient handling of 12-inch wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • Related Blog
    • Reviews

    • Discussing CVD furnace

    • Methods of AlN Crystal Growth

      AlN, as third-generation semiconductor material, is not only an important blue light and ultraviolet light material, but also an important packaging, dielectric isolation and insulation material for electronic devices and integrated circuits, especially suitable for high-temperature and high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

    • CVD process for SiC wafer epitaxy

      The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

    • Difficulties in GaN preparation

      As a third-generation semiconductor material, Gallium Nitride is often compared with Silicon Carbide. Gallium Nitride still demonstrates its superiority with its large bandgap, high breakdown voltage, high thermal conductivity, high saturated electron drift velocity and strong radiation resistance. But it is undeniable that, like Silicon Carbide, Gallium Nitride also has various technical difficulties.

    • Ion Implant and Diffusion Process

      Ion implantation is a method of semiconductor doping and one of the main processes in semiconductor manufacturing.

    • What is CVD for SiC

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