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Deep-UV LED Epitaxial Susceptor
  • Deep-UV LED Epitaxial SusceptorDeep-UV LED Epitaxial Susceptor
  • Deep-UV LED Epitaxial SusceptorDeep-UV LED Epitaxial Susceptor

Deep-UV LED Epitaxial Susceptor

Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We have been manufacturer and supplier of Deep-UV LED Epitaxial Susceptor for many years. Our products have a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

Deep-UV LED Epitaxial Susceptors are essential for the fabrication of LED. Semicorex silicon carbide (SiC)-coated plate make the manufacture of high quality deep UV LED wafers more efficient. SiC Coating is a dense, wear-resistant silicon carbide (SiC) coating. It has high corrosion and heat resistance properties as well as excellent thermal conductivity. We apply SiC in thin layers onto the graphite using the chemical vapor deposition (CVD) process.
No matter what your specific requirements might be, we will identify the best solution for MOCVD epitaxy as well as the semiconductor and LED industries.
Our Deep-UV LED Epitaxial Susceptor is designed to achieve the best laminar gas flow pattern, ensuring evenness of thermal profile. This helps to prevent any contamination or impurities diffusion, ensuring high-quality epitaxial growth on the wafer chip.
Contact us today to learn more about our Deep-UV LED Epitaxial Susceptor.


Parameters of Deep-UV LED Epitaxial Susceptor

Main Specifications of CVD-SIC Coating

SiC-CVD Properties

Crystal Structure

FCC β phase

Density

g/cm ³

3.21

Hardness

Vickers hardness

2500

Grain Size

μm

2~10

Chemical Purity

%

99.99995

Heat Capacity

J·kg-1 ·K-1

640

Sublimation Temperature

2700

Felexural Strength

MPa (RT 4-point)

415

Young’ s Modulus

Gpa (4pt bend, 1300℃)

430

Thermal Expansion (C.T.E)

10-6K-1

4.5

Thermal conductivity

(W/mK)

300


Features of Deep-UV LED Epitaxial Susceptor

- Lower wavelength deviation and higher chip yields
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- Tighter dimensional tolerances lead to higher product yield and lower costs
- Avoid peeling off and ensure coating on all surface
High temperature oxidation resistance: Stable at high temperatures up to 1600°C
High purity: made by CVD chemical vapor deposition under high temperature chlorination conditions.
Corrosion resistance: high hardness, dense surface and fine particles.
Corrosion resistance: acid, alkali, salt and organic reagents.




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