Inductively-Coupled Plasma (ICP)

Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a stable, high-temperature oxidation resistance of up to 1600°C, our carriers ensure even thermal profiles, laminar gas flow patterns, and prevent contamination or impurities diffusion.

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Product Description

Need a wafer carrier that can handle high-temperature, harsh chemical environments? Look no further than Semicorex's silicon carbide coated susceptor for Inductively-Coupled Plasma (ICP) . Our carriers feature a fine SiC crystal coating that provides superior heat resistance, even thermal uniformity, and durable chemical resistance.
Contact us today to learn more about our SiC susceptor for Inductively-Coupled Plasma (ICP).

Parameters of susceptor for Inductively-Coupled Plasma (ICP)

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300