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China etch carrier Manufacturers, Suppliers, Factory

Semicorex has been producing etch carrier for many years and is one of the professional etch carrier manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    Semicorex PBN Heaters boast a sophisticated triple-layered design engineered to redefine performance benchmarks. At its core lies a foundation crafted from high-purity pyrolytic boron nitride (PBN), renowned for its exceptional thermal conductivity and robust structural integrity. we look forward to becoming your long-term partner in China.
  • Semiconductor SiC Components for Epitaxial

    Semiconductor SiC Components for Epitaxial

    Enhance the capabilities and efficiency of your semiconductor equipment with our groundbreaking Semiconductor SiC Components for Epitaxial. These semi-cylindrical components are specifically engineered for the intake section of epitaxial reactors, playing a crucial role in optimizing semiconductor manufacturing processes. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Susceptor for MOCVD

    SiC Susceptor for MOCVD

    Semicorex is a leading manufacturer and supplier of SiC Susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • SiC Dummy Wafer

    SiC Dummy Wafer

    Semicorex SiC Dummy Wafer is a specialized tool in semiconductor manufacturing, designed primarily for experimental and testing purposes.**
  • TaC Coated Graphite Part

    TaC Coated Graphite Part

    Semicorex TaC Coated Graphite Part is a high-performance component designed for use in SiC crystal growth and epitaxy processes, featuring a durable Tantalum Carbide coating that enhances thermal stability and chemical resistance. Choose Semicorex for our innovative solutions, superior product quality, and expertise in providing reliable, long-lasting components tailored to meet the demanding needs of the semiconductor industry.*
  • Alumina Ceramic Flanges

    Alumina Ceramic Flanges

    Alumina Ceramic Flanges are engineered components that offer substantial benefits, particularly in settings where thermal stability, weight considerations, and corrosion resistance are of paramount importance. These flanges are not only durable and reliable but also contribute to the overall efficiency and cost-effectiveness of the systems in which they are employed. Their unique properties make them an excellent choice for advanced engineering solutions in various industrial sectors.We at Semicorex are dedicated to manufacturing and supplying high-performance Alumina Ceramic Flanges that fuse quality with cost-efficiency.**
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  • Reviews

  • Why choose SiC-coated graphite susceptors?

    Graphite susceptor is one of the essential parts in the MOCVD equipment, is the carrier and the heater of the wafer substrate. Its properties of thermal stability and thermal uniformity play a decisive role in the quality of wafer epitaxial growth, which directly determines the uniformity and purity of the layer materials, in a result its quality directly affects the preparation of epitaxy.

  • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

    In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

  • Silicon Wafer

    Silicon material is a solid material with certain semiconductor electrical properties and physical stability, and provides substrate support for the subsequent integrated circuit manufacturing process. It is a key material for silicon-based integrated circuits. More than 95% of semiconductor devices and more than 90% of integrated circuits in the world are made on silicon wafers.

  • Defect Detection in Silicon Carbide Wafer Processing

    SiC substrates are the most crucial component in the silicon carbide industry, accounting for nearly 50% of its value. Without SiC substrates, it is impossible to manufacture SiC devices, making them the essential material foundation.

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • The structure of Electrostatic Chuck(ESC)

    An Electrostatic Chuck (ESC) is a device used to hold semiconductor wafers in place during processes such as etching, deposition, or polishing.

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