English
Home > Products > Etch Carrier for ICP

China Etch Carrier for ICP Manufacturers, Suppliers, Factory

We emphasize growth and introduce new goods into the market every year for Etch Carrier for ICP,Etch Carrier(ICP/PSS),ICP Carrier,Graphite Components,Carbide-Coated Graphite, Our aim is "blazing new ground, Passing Value", in the future, we sincerely invite you to grow up with us and make a bright future together!
Etch Carrier for ICP, During the short years, we serve our clients honestly as Quality First, Integrity Prime, Delivery Timely, which has earned us an outstanding reputation and an impressive client care portfolio. Looking forward to working with you Now!

Related Products

Hot Products

  • SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber

    SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber

    Semicorex's SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber is a highly reliable solution for semiconductor manufacturing processes, featuring superior heat distribution and thermal conductivity properties. It is also highly resistant to corrosion, oxidation, and high temperatures.
  • Spare Parts in Epitaxial Growth

    Spare Parts in Epitaxial Growth

    Semicorex Spare Parts in Epitaxial Growth are crucial components utilized within epitaxial growth systems, particularly in processes involving quartz tube setups. These parts play a vital role in facilitating gas flow to drive tray base rotation and ensure precise temperature control throughout the epitaxial growth process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Wafer Cassette Box

    Wafer Cassette Box

    Semicorex Wafer Cassette Box is a PFA fluoroplastic cassette with a large opening area, designed to improve wafer washing and drying performance in semiconductor manufacturing. Choose Semicorex for its proven track record of delivering high-quality, durable, and chemically resistant wafer handling solutions.*
  • Graphite Waferholder

    Graphite Waferholder

    Semicorex SiC Coated Graphite Waferholder is a high-performance component designed for precise wafer handling in semiconductor epitaxy growth processes. Semicorex’s expertise in advanced materials and manufacturing ensures our products offer unmatched reliability, durability, and customization for optimal semiconductor production.*
  • SiC Coating Flat Part

    SiC Coating Flat Part

    Semicorex SiC Coating Flat Part is a SiC-coated graphite component essential for uniform airflow conduction in the SiC epitaxy process. Semicorex delivers precision-engineered solutions with unmatched quality, ensuring optimal performance for semiconductor manufacturing.*
  • Silicon Carbide Vacuum Chuck

    Silicon Carbide Vacuum Chuck

    Semicorex Silicon Carbide Vacuum Chuck is a high-performance wafer handling solution crafted from porous silicon carbide. It is specifically engineered for vacuum adsorption of semiconductor wafers during critical processes such as mounting (waxing), thinning, de-waxing, cleaning, dicing, and rapid thermal annealing (RTA). Choose Semicorex for unmatched material purity, dimensional precision, and reliable performance in demanding semiconductor environments.*
  • Related Blog
  • Reviews

  • What is a MOCVD system?

  • Advantages and Disadvantages of Gallium Nitride (GaN) Applications

    As the world looks for new opportunities in semiconductors, gallium nitride continues to stand out as a potential candidate for future power and RF applications. However, for all the benefits it offers, it still faces a major challenge; there are no P-type (P-type) products. Why is GaN touted as the next major semiconductor material, why is the lack of P-type GaN devices a major drawback, and what does this mean for future designs?

  • Doping Control in Sublimation SiC Growth

    Silicon carbide (SiC) plays an important role in manufacturing power electronics and high-frequency devices due to its excellent electrical and thermal properties. The quality and doping level of SiC crystals directly affect the performance of the device, so precise control of doping is one of the key technologies in the SiC growth process.

  • SiC Single Crystal Substrate Processing

    Silicon Carbide (SiC) single crystals are primarily produced using the sublimation method. After removing the crystal from the crucible, several intricate processing steps are required to create usable wafers.

  • The Fatal Flaw of GaN

    ​As the world searches for new opportunities in the semiconductor field, Gallium Nitride (GaN) continues to stand out as a potential candidate for future power and RF applications. However, despite its numerous benefits, GaN faces a significant challenge: the absence of P-type products. Why is GaN hailed as the next major semiconductor material, why is the lack of P-type GaN devices a critical drawback, and what does this mean for future designs?

  • Hierarchical Porous Carbon Materials: Synthesis and Introduction

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept