ICP Plasma Etching System

Semicorex's SiC Coated carrier for ICP Plasma Etching System is a reliable and cost-effective solution for high-temperature wafer handling processes such as epitaxy and MOCVD. Our carriers feature a fine SiC crystal coating that provides superior heat resistance, even thermal uniformity, and durable chemical resistance.

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Product Description

Achieve the highest quality epitaxy and MOCVD processes with Semicorex's SiC Coated carrier for ICP Plasma Etching System. Our product is engineered specifically for these processes, offering superior heat and corrosion resistance. Our fine SiC crystal coating provides a clean and smooth surface, allowing for optimal handling of wafers.
Contact us today to learn more about our SiC Coated carrier for ICP Plasma Etching System.

Parameters of SiC Coated carrier for ICP Plasma Etching System

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300