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China Carbide-Coated Graphite Manufacturers, Suppliers, Factory

In the past few years, our company absorbed and digested advanced technologies both at home and abroad. Meanwhile, our company staffs a team of experts devoted to the development of Carbide-Coated Graphite,Etch Carrier(ICP/PSS),ICP Carrier,Graphite Components,ICP Silicon Carbon Coated Graphite, For anyone who is fascinated in any items, be sure to truly feel totally free to speak to us for further more details or be sure to deliver us email immediately, we will reply you in 24 hrs as well as the most effective quotation will probably be provided.
Carbide-Coated Graphite, Many items fully conform to the most rigorous of international guidelines and with our first-rate delivery service you will have them delivered at any time and in any place. And because Kayo deals in the entire spectrum of protective equipment, our customers don't ought to waste time shopping around.

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  • Silicon Carbide Coating Graphite Susceptor for MOCVD

    Silicon Carbide Coating Graphite Susceptor for MOCVD

    Semicorex is a trusted supplier and manufacturer of silicon carbide coating graphite susceptor for MOCVD. Our product is specially designed to cater to the needs of the semiconductor industry in growing the epitaxial layer on the wafer chip. The product is used as the center plate in MOCVD, with a gear or ring-shaped design. It has high heat and corrosion resistance, making it ideal for use in extreme environments.
  • Silicon Carbide Bushing

    Silicon Carbide Bushing

    Perfect for next-generation lithography and wafer-handling applications, Semicorex ultra-pure Silicon Carbide Bushing ensure minimal contamination and provide exceptionally long life performance. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Process Tube for Diffusion Furnaces

    Process Tube for Diffusion Furnaces

    Semicorex process tube for diffusion furnaces is a specialized component used in the manufacturing of semiconductor devices. It is designed to provide a controlled environment for diffusion processes, where impurities are introduced into the semiconductor wafers to modify their electrical properties. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • 10x10mm Nonpolar M-plane Aluminum Substrate

    10x10mm Nonpolar M-plane Aluminum Substrate

    The unique attributes of Semicorex 10x10mm Nonpolar M-plane Aluminum Substrate make it an ideal substrate for ultraviolet (UV) LEDs, UV detectors, UV lasers, and the next generation of 5G high-power/high-frequency RF devices. In wireless communications, 10x10mm Nonpolar M-plane Aluminum Substrate’s properties facilitate the development of devices capable of handling the high power and frequencies essential for 5G technologies, enhancing signal transmission and reception. Furthermore, in fields like healthcare and military, AlN-based devices are employed in medical phototherapy for treating skin conditions, drug discovery through photodynamic therapies, and secure communication technologies in aerospace, underscoring 10x10mm Nonpolar M-plane Aluminum Substrate’s versatility and critical role in technological advancements across diverse sectors.
  • Silicon Carbide Boat

    Silicon Carbide Boat

    Semicorex Silicon Carbide Boat is a high-performance component designed for use in semiconductor diffusion processes, offering exceptional thermal stability, wear resistance, and chemical durability. Choose Semicorex for its advanced manufacturing capabilities, delivering reliable, high-quality products that ensure optimal performance in demanding semiconductor and industrial applications.*
  • SICOI Wafer

    SICOI Wafer

    SICOI wafer, a silicon carbide-insulator composite wafer made by a special technique, is primarily utilized in photonic integrated circuits and microelectromechanical systems (MEMS). This composite structure combines the excellent properties of silicon carbide with the isolation characteristics of insulators, significantly enhancing the overall performance of semiconductor devices and providing ideal solutions for high-performance electronic and optoelectronic devices.
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  • Discussing CVD furnace

  • GaN vs SiC

    There are several materials currently under investigation, among which silicon carbide stands out as one of the most promising. Similar to GaN, it boasts higher operating voltages, higher breakdown voltages, and superior conductivity compared to silicon. Moreover, thanks to its high thermal conductivity, silicon carbide can be utilized in environments with extreme temperatures. Lastly, it is significantly smaller in size yet capable of handling greater power.

  • Differences between SiC crystals with different structures

    Silicon carbide (SiC) is a material that possesses exceptional thermal, physical and chemical stability, exhibiting properties that go beyond those of conventional materials. Its thermal conductivity is an astonishing 84W/(m·K), which is not only higher than copper but also three times that of silicon. This demonstrates its enormous potential for use in thermal management applications.

  • Substrate Cutting and Grinding Process

    SiC substrate material is the core of SiC chip. The production process of the substrate is: after obtaining the SiC crystal ingot through single crystal growth; then preparing the SiC substrate requires smoothing, rounding, cutting, grinding (thinning); mechanical polishing, chemical mechanical polishing; and cleaning, testing, etc. Process

  • Plasma Processes in CVD Operations

    Chemical Vapor Deposition (CVD) refers to a process technology where multiple gaseous reactants at varied partial pressures undergo a chemical reaction under specific temperature and pressure conditions. The resulting solid substance deposits on the surface of the substrate material, thereby obtaining the desired thin film. In traditional integrated circuit manufacturing processes, the obtained thin film materials are generally compounds such as oxides, nitrides, carbides, or materials like polycrystalline silicon, amorphous silicon, etc.

  • Why Choose Pressureless Sintering for SiC Ceramic Preparation?

    The ultra-high synthesis temperature and the difficulty of achieving dense sintering of SiC ceramics have limited their development. The sintering process is crucial for SiC ceramics.

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