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In the past few years, our company absorbed and digested advanced technologies both at home and abroad. Meanwhile, our company staffs a team of experts devoted to the development of Carbide-Coated Graphite,Etch Carrier(ICP/PSS),ICP Carrier,Graphite Components,ICP Silicon Carbon Coated Graphite, For anyone who is fascinated in any items, be sure to truly feel totally free to speak to us for further more details or be sure to deliver us email immediately, we will reply you in 24 hrs as well as the most effective quotation will probably be provided.
Carbide-Coated Graphite, Many items fully conform to the most rigorous of international guidelines and with our first-rate delivery service you will have them delivered at any time and in any place. And because Kayo deals in the entire spectrum of protective equipment, our customers don't ought to waste time shopping around.

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  • SiC Coated Epitaxial Reactor Barrel

    SiC Coated Epitaxial Reactor Barrel

    The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
  • Pancake Susceptor for Wafer Epitaxial Process

    Pancake Susceptor for Wafer Epitaxial Process

    Semicorex pancake susceptor for wafer epitaxial process is a high purity graphite base by CVD SiC coated. Our pancake susceptor for wafer epitaxial process has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Silicon Carbide Cantilever Paddle

    Silicon Carbide Cantilever Paddle

    Semicorex silicon carbide cantilever paddle is a specialized component used in furnaces for various thermal processing applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CFC Nut and Bolt

    CFC Nut and Bolt

    Semicorex is proud to present the CFC Nut and Bolt, a groundbreaking innovation in the realm of high-performance fasteners. Developed from a sophisticated carbon fiber matrix, this product embodies the pinnacle of composite material engineering, designed specifically to meet the demands of high-temperature environments where traditional materials fall short.
  • Porous Graphite Barrel

    Porous Graphite Barrel

    Semicorex Porous Graphite Barrel is a high-purity material featuring a highly open interconnected pore structure and high porosity, designed to enhance SiC crystal growth in advanced furnaces. Choose Semicorex for innovative semiconductor material solutions that deliver superior quality, reliability, and precision.*
  • SiC Steering Mirror

    SiC Steering Mirror

    Semicorex SiC Steering Mirror is a remarkable material that combines durability, resilience, and exceptional optical performance, making it indispensable in advanced optical systems across various high-tech industries.
  • Related Blog
  • Reviews

  • What is P-type SiC wafer?

    A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

  • What is cantilever paddles?

    The wafer boats, loaded with a batch of wafers to be processed, are positioned on long cantilevered paddles.

  • Applications of TaC Coated Graphite Components

    In the process of growing SiC and AlN single crystals by the physical vapor transport method (PVT), components such as the crucible, seed crystal holder and guide ring play a vital role. During the preparation process of SiC, the seed crystal is located in a relatively low temperature region, while the raw material is in a high temperature region exceeding 2400°C. The raw materials decompose at high temperatures to form SiXCy (including Si, SiC₂, Si₂C and other components).

  • A Brief History of Silicon Carbide and Applications of Silicon Carbide Coatings

    The history of silicon carbide (SiC) dates back to 1891, when Edward Goodrich Acheson accidentally discovered it while attempting to synthesize artificial diamonds. Acheson heated a mixture of clay (aluminosilicate) and powdered coke (carbon) in an electric furnace. Instead of the expected diamonds, he obtained a bright green crystal adhering to the carbon. This crystal had a hardness second only to diamond, and was thus named carborundum. In 1904, French-Jewish chemist Henri Moissan discovered rare natural silicon carbide minerals while studying meteorite samples from the Diablo Canyon in Arizona, USA. He named these minerals moissanite, and his discovery earned him the 1906 Nobel Prize in Chemistry.

  • Silicon Carbide Substrate

    The process of silicon carbide substrate is complex and difficult to manufacture. SiC substrate occupies the main value of the industry chain, accounting for 47%. It is expected that with the expansion of production capacity and the improvement of yield in the future, it is expected to drop to 30%.

  • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

    Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

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