6'' Wafer Carrier for Aixtron G5

Semicorex 6'' Wafer Carrier for Aixtron G5, often referred to as susceptors, plays an essential role by securely holding the semiconductor wafers during high-temperature processing. The susceptors ensure that the wafers remain in a fixed position, which is crucial for uniform layer deposition:

Thermal Management:

The 6'' Wafer Carrier for Aixtron G5 is designed to provide uniform heating and cooling across the wafer surface, which is critical for the epitaxial growth processes used to create high-quality semiconductor layers.

Epitaxial Growth:

SiC and GaN Layers:

The Aixtron G5 platform is primarily used for the epitaxial growth of SiC and GaN layers. These layers are fundamental in the fabrication of high-electron-mobility transistors (HEMTs), LEDs, and other advanced semiconductor devices.

Precision and Uniformity:

The high precision and uniformity required in the epitaxial growth process are facilitated by the exceptional properties of the 6'' Wafer Carrier for Aixtron G5. The carrier help achieve the stringent thickness and composition uniformity needed for high-performance semiconductor devices.

Benefits:

High Temperature Stability:

Extreme Temperature Tolerance:

The 6'' Wafer Carrier for Aixtron G5 can endure extremely high temperatures, often exceeding 1600°C. This stability is crucial for epitaxial processes that require sustained high temperatures for extended periods.

Thermal Integrity:

The ability of the 6'' Wafer Carrier for Aixtron G5 to maintain structural integrity at such high temperatures ensures consistent performance and reduces the risk of thermal degradation, which could compromise the quality of the semiconductor layers.

Excellent Thermal Conductivity:

Heat Distribution:

The high thermal conductivity of SiC facilitates efficient heat transfer across the wafer surface, ensuring a uniform temperature profile. This uniformity is vital for avoiding thermal gradients that can lead to defects and non-uniformities in the epitaxial layers.

Enhanced Process Control:

Improved thermal management allows for better control over the epitaxial growth process, enabling the production of higher quality semiconductor layers with fewer defects.

Chemical Resistance:

Corrosive Environment Compatibility:

The 6'' Wafer Carrier for Aixtron G5 provides exceptional resistance to the corrosive gases commonly used in CVD processes, such as hydrogen and ammonia. This resistance prolongs the lifespan of the wafer carriers by protecting the graphite substrate from chemical attack.

Reduced Maintenance Costs:

The durability of the 6'' Wafer Carrier for Aixtron G5 reduces the frequency of maintenance and replacements, leading to lower operational costs and increased uptime for the Aixtron G5 equipment.

Low Coefficient of Thermal Expansion (CTE):

Minimized Thermal Stress:

SiC’s low CTE helps minimize thermal stress during the rapid heating and cooling cycles inherent in epitaxial growth processes. This reduction in thermal stress decreases the likelihood of wafer cracking or warping, which can lead to device failure.

Compatibility with Aixtron G5 Equipment:

Tailored Design:

Semicorex 6'' Wafer Carrier for Aixtron G5 is specifically engineered to be compatible with Aixtron G5 equipment, ensuring optimal performance and seamless integration.

Maximized Performance:

This compatibility maximizes the performance and efficiency of the Aixtron G5 system, enabling it to meet the exacting requirements of modern semiconductor manufacturing processes.