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    • China silicon carbide ceramic coating Manufacturers, Suppliers, Factory

    Semicorex has been producing silicon carbide ceramic coating for many years and is one of the professional silicon carbide ceramic coating manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Fused Quartz Pedestal

      Fused Quartz Pedestal

      The Fused Quartz Pedestal, is specifically designed for use in Atomic Layer Deposition (ALD), Low-Pressure Chemical Vapor Deposition (LPCVD), and diffusion processes, ensuring uniform deposition of thin films on wafer surfaces.**
    • Al2O3 Vacuum Chuck

      Al2O3 Vacuum Chuck

      Semicorex Al2O3 Vacuum Chuck is designed to meet the rigorous demands of various semiconductor production processes, including thinning, dicing, cleaning, and transporting wafers. **
    • Sapphire Crystal Growth Heater

      Sapphire Crystal Growth Heater

      Enhance your capacity for precision thermal management with the Semicorex Sapphire Crystal Growth Heater. This heater, meticulously designed for optimal performance, boasts a SiC layer integration that solidifies its role as a superior element in crystal growth operations, promoting both high efficiency and dependability.We at Semicorex are dedicated to manufacturing and supplying high-performance Sapphire Crystal Growth Heater that fuse quality with cost-efficiency.
    • PSS Etching Carrier Plate for Semiconductor

      PSS Etching Carrier Plate for Semiconductor

      Semicorex PSS Etching Carrier Plate for Semiconductor is specially engineered for high-temperature and harsh chemical cleaning environments required for epitaxial growth and wafer handling processes. Our ultra-pure PSS Etching Carrier Plate for Semiconductor is designed to support wafers during thin-film deposition phases like MOCVD and epitaxy susceptors, pancake or satellite platforms. Our SiC coated carrier has high heat and corrosion resistance, excellent heat distribution properties, and a high thermal conductivity. We provide cost-effective solutions to our customers, and our products cover many European and American markets. Semicorex looks forward to being your long-term partner in China.
    • SiC Graphite RTP Carrier Plate for MOCVD

      SiC Graphite RTP Carrier Plate for MOCVD

      Semicorex SiC Graphite RTP Carrier Plate for MOCVD offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With a high-quality SiC coated graphite, this product is engineered to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.
    • SiC Furnace Tube

      SiC Furnace Tube

      Semicorex SiC Furnace Tube is an indispensable asset for semiconductor manufacturers aiming to enhance their diffusion processes. With its unparalleled material properties, precision design, and ease of use, our SiC Furnace Tube is the ideal solution for improving yield and product quality. Trust Semicorex to provide the cutting-edge solutions you need to excel in the fast-paced semiconductor landscape.*
    • Related Blog
    • Reviews

    • Various applications of quartz in semiconductor manufacturing

      At first glance, quartz (SiO2) material looks very similar to glass, but what is special is that ordinary glass is composed of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while quartz only contains SiO2, and its microstructure is a simple network composed of silicon dioxide tetrahedral structural units.

    • Methods of AlN Crystal Growth

      AlN, as third-generation semiconductor material, is not only an important blue light and ultraviolet light material, but also an important packaging, dielectric isolation and insulation material for electronic devices and integrated circuits, especially suitable for high-temperature and high-power devices. In addition, AlN and GaN have a good thermal match and chemical compatibility, AlN used as GaN epitaxial substrate, can significantly reduce the defect density in GaN devices, improve device performance.

    • Method for preparing SiC powder

      Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

    • High-Purity CVD Thick SiC: Process Insights for Material Growth

      Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

    • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

      Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

    • Oxidation Process

      The most basic stage of all processes is the oxidation process. The oxidation process is to place the silicon wafer in an atmosphere of oxidants such as oxygen or water vapor for high-temperature heat treatment (800~1200℃), and a chemical reaction occurs on the surface of the silicon wafer to form an oxide film (SiO2 film).

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    sic ceramic;cvd silicon carbide;RBSiC;SSiC;silicon carbide ceramic coating;;silicon carbide tubes;diffusion process;wafer processing;solar cell manufacturing

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