SiC Epitaxy Susceptor

The SiC Epitaxy Susceptor is a critical component used in MOCVD equipment to support and heat single crystal substrates. Its superior performance parameters such as thermal stability and thermal uniformity play a decisive role in the quality of epitaxial material growth, ensuring high levels of uniformity and purity in thin film materials.

The SiC Epitaxy Susceptor possesses excellent density, providing effective protection in high temperature and corrosive working environments. Additionally, its high level of surface flatness perfectly meets the requirements for single crystal growth on the substrate surface.

The minimal coefficient of thermal expansion differences in the SiC Epitaxy Susceptor significantly enhances the bonding strength between the epitaxial substrate and the coating material, thus reducing the likelihood of cracking after experiencing high-temperature thermal cycling.

Simultaneously, it exhibits high thermal conductivity, facilitating rapid and uniform heat distribution for chip growth. Moreover, its high melting point, temperature resistance, oxidation resistance, and corrosion resistance enable stable operation in high-temperature and corrosive working environments.

As a crucial component within the reaction chamber of MOCVD equipment, the SiC Epitaxy Susceptor must possess advantages such as high temperature resistance, uniform thermal conductivity, good chemical stability, and strong resistance to thermal shock. Semicorex SiC Epitaxy Susceptor meets all of these requirements.