GaN-on-SiC Substrate

Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our GaN-on-SiC Substrate susceptors have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.

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Product Description

GaN-on-SiC Substrate wafer carriers used in thin film deposition phases or wafer handling processing must endure high temperatures and harsh chemical cleaning. Semicorex supplies high-purity SiC coated GaN-on-SiC Substrate susceptor provides superior heat resistance, even thermal uniformity for consistent epi layer thickness and resistance, and durable chemical resistance. Fine SiC crystal coating provides a clean, smooth surface, critical for handling since pristine wafers contact the susceptor at many points across their entire area.

At Semicorex, we focus on providing high-quality, cost-effective products to our customers. Our GaN-on-SiC Substrate susceptor has a price advantage and is exported to many European and American markets. We aim to be your long-term partner, delivering consistent quality products and exceptional customer service.

Parameters of GaN-on-SiC Substrate Susceptor

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of GaN-on-SiC Substrate Susceptor

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.

- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.

- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.

- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.

- High melting point, high temperature oxidation resistance, corrosion resistance.