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Our progress depends on the highly developed products ,great talents and repeatedly strengthened technology forces for Epi Growth,Gan On Sic,Gan Substrate,Gan On Sic Substrate,Gan On Sic Wafer, We warmly welcome pals from all walks of lifetime to hunt mutual cooperation and generate a far more outstanding and splendid tomorrow.
Epi Growth, We always insist on the principle of "Quality and service are the life of the product". Till now, our products have been exported to more than 20 countries under our strict quality control and high level service.

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  • SiC Cantilever Paddle

    SiC Cantilever Paddle

    Semicorex SiC (Silicon Carbide) Cantilever Paddle is a crucial component used in semiconductor manufacturing processes, particularly in diffusion or LPCVD (Low-Pressure Chemical Vapor Deposition) furnaces during processes like diffusion and RTP (Rapid Thermal Processing). The SiC Cantilever Paddle is to carry semiconductor wafers securely within the process tube during various high-temperature processes such as diffusion and RTP. It serves the purpose of supporting and transporting wafers within the process tube of these furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Mechanical Seal for Pump

    Mechanical Seal for Pump

    Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components focusing on silicon carbide layers in semiconductor industries. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Mechanical Seal for pump has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Coating Component

    SiC Coating Component

    Semicorex SiC Coating Component is an essential material designed to meet the demanding requirements of the SiC epitaxy process, a pivotal stage in semiconductor manufacturing. It plays a critical role in optimizing the growth environment for silicon carbide (SiC) crystals, contributing significantly to the quality and performance of the final product.*
  • Semiconductor Cassette

    Semiconductor Cassette

    Semicorex Semiconductor Cassette is one of the critical components designed to ensure the safety and integrity of delicate wafer. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Ceramic Electrostatic Chuck

    Ceramic Electrostatic Chuck

    Semicorex Ceramic Electrostatic Chuck (ESC) is a specialized tool meticulously crafted to meet the rigorous demands of semiconductor manufacturing. With our steadfast commitment to providing top-quality products at competitive prices, we are ready to become your long-term partner in China.*
  • Barrel Susceptor with SiC Coating

    Barrel Susceptor with SiC Coating

    Semicorex Barrel Susceptor with SiC Coating is a cutting-edge solution designed to elevate the efficiency and precision of silicon epitaxial processes. Crafted with meticulous attention to detail, this Barrel Susceptor with SiC Coating is tailored to meet the demanding requirements of semiconductor manufacturing, serving as the optimal wafer holder and facilitating the seamless transfer of heat to wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • Crystal Orientation and Defects in Silicon Wafers

    The basic crystal unit cell of monocrystalline silicon is the zinc blende structure, in which each silicon atom bonds chemically with four neighboring silicon atoms. This structure is also found in monocrystalline carbon diamonds.

  • SK Siltron Expands Its SiC Wafer Production with a $544 Million Loan from the U.S. Department of Energy

    The U.S. Department of Energy (DOE) recently confirmed a $544 million loan to SK Siltron, a semiconductor wafer manufacturer under SK Group.

  • Semiconductor doping process

    One of the unique properties of semiconductor materials is that their conductivity, as well as their conductivity type (N-type or P-type), can be created and controlled through a process called doping. This involves introducing specialized impurities, known as dopants, into the material to form junctions on the surface of the wafer. The industry employs two main doping techniques: thermal diffusion and ion implantation.

  • Method for preparing SiC powder

    Silicon carbide (SiC) is an inorganic substance. The amount of naturally occurring silicon carbide is very small. It is a rare mineral and is called moissanite. Silicon carbide used in industrial production is mostly artificially synthesized.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • High-Purity CVD Thick SiC: Process Insights for Material Growth

    Thick, high-purity silicon carbide (SiC) layers, typically exceeding 1mm, are critical components in various high-value applications, including semiconductor fabrication and aerospace technologies. This article delves into the Chemical Vapor Deposition (CVD) process for producing such layers, highlighting key process parameters, material characteristics, and emerging applications.

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