RTP RTA SiC Coated Carrier

Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. Semicorex graphite susceptor engineered specifically for epitaxy equipment with high heat and corrosion resistance in China. Our RTP RTA SiC Coated Carrier has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.

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Product Description

Semicorex supplies RTP RTA SiC Coated Carrier used to support wafers, which is really stable for RTA, RTP or harsh chemical cleaning. RTP RTA SiC Coated Carrier with high-purity silicon carbide (SiC) coated graphite construction provides superior heat resistance, even thermal uniformity for consistent epi layer thickness and resistance, and durable chemical resistance. Fine SiC crystal coating provides a clean, smooth surface, critical for handling since pristine wafers contact the susceptor at many points across their entire area.
At Semicorex, we focus on providing high-quality, cost-effective RTP RTA SiC Coated Carrier, we prioritize customer satisfaction and provide cost-effective solutions. We look forward to becoming your long-term partner, delivering high-quality products and exceptional customer service.

Parameters of RTP RTA SiC Coated Carrier

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of RTP RTA SiC Coated Carrier

- Both the graphite substrate and silicon carbide layer have good density and can play a good protective role in high temperature and corrosive working environments.
- Silicon carbide coated susceptor used for single crystal growth has a very high surface flatness.
- Reduce the difference in thermal expansion coefficient between the graphite substrate and silicon carbide layer, effectively improve the bonding strength to prevent cracking and delamination.
- Both the graphite substrate and silicon carbide layer have a high thermal conductivity, and excellent heat distribution properties.
- High melting point, high temperature oxidation resistance, corrosion resistance.