> Products > Silicon Carbide Coated > RTP Carrier > SiC Graphite RTP Carrier Plate for MOCVD

Products

New Products

SiC Graphite RTP Carrier Plate for MOCVD

Semicorex SiC Graphite RTP Carrier Plate for MOCVD offers superior heat resistance and thermal uniformity, making it the perfect solution for semiconductor wafer processing applications. With a high-quality SiC coated graphite, this product is engineered to withstand the harshest deposition environment for epitaxial growth. The high thermal conductivity and excellent heat distribution properties ensure reliable performance for RTA, RTP, or harsh chemical cleaning.

Send Inquiry

Product Description

Our SiC Graphite RTP Carrier Plate for MOCVD for MOCVD Epitaxial Growth is the perfect solution for wafer handling and epitaxial growth processing. With a smooth surface and high durability against chemical cleaning, this product ensures reliable performance in harsh deposition environments.
The material of our SiC graphite RTP carrier plate for MOCVD is engineered to prevent cracks and delamination, while the superior heat resistance and thermal uniformity ensure consistent performance for RTA, RTP, or harsh chemical cleaning.
Contact us today to learn more about our SiC Graphite RTP Carrier Plate for MOCVD.

Parameters of SiC Graphite RTP Carrier Plate for MOCVD

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of SiC Graphite RTP Carrier Plate for MOCVD

High purity SiC coated graphite
Superior heat resistance & thermal uniformity
Fine SiC crystal coated for a smooth surface
High durability against chemical cleaning
Material is designed so that cracks and delamination do not occur.