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SiC Coated RTP Carrier Plate for Epitaxial Growth

Semicorex SiC Coated RTP Carrier Plate for Epitaxial Growth is the perfect solution for semiconductor wafer processing applications. With its high-quality carbon graphite susceptors and quartz crucibles processed by MOCVD on the surface of graphite, ceramics, etc., this product is ideal for wafer handling and epitaxial growth processing. The SiC coated carrier ensures high thermal conductivity and excellent heat distribution properties, making it a reliable choice for RTA, RTP, or harsh chemical cleaning.

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Product Description

Our SiC Coated RTP Carrier Plate for Epitaxial Growth is designed to withstand the toughest conditions of the deposition environment. With its high heat and corrosion resistance, the epitaxy susceptors are subjected to the perfect deposition environment for epitaxial growth. The fine SiC crystal coating on the carrier ensures a smooth surface and high durability against chemical cleaning, while the material is engineered to prevent cracks and delamination.
Contact us today to learn more about our SiC Coated RTP Carrier Plate for Epitaxial Growth.

Parameters of SiC Coated RTP Carrier Plate for Epitaxial Growth

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of SiC Coated RTP Carrier Plate for Epitaxial Growth

High purity SiC coated graphite
Superior heat resistance & thermal uniformity
Fine SiC crystal coated for a smooth surface
High durability against chemical cleaning
Material is designed so that cracks and delamination do not occur.