RTP/RTA SiC Coating Carrier

Semicorex RTP/RTA SiC Coating Carrier is engineered to withstand the toughest conditions of the deposition environment. With its high heat and corrosion resistance, this product is designed to provide optimal performance for epitaxial growth. The SiC coated carrier has a high thermal conductivity and excellent heat distribution properties, ensuring reliable performance for RTA, RTP, or harsh chemical cleaning.

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Product Description

Our RTP/RTA SiC Coating Carrier for MOCVD Epitaxial Growth is the perfect solution for wafer handling and epitaxial growth processing. With a smooth surface and high durability against chemical cleaning, this product offers reliable performance in harsh deposition environments.
The material of our RTP/RTA SiC coating carrier is engineered to prevent cracks and delamination, while the superior heat resistance and thermal uniformity ensure consistent performance for RTA, RTP, or harsh chemical cleaning.
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Parameters of RTP/RTA SiC Coating Carrier

Main Specifications of CVD-SIC Coating
SiC-CVD Properties
Crystal Structure	FCC β phase
Density	g/cm ³	3.21
Hardness	Vickers hardness	2500
Grain Size	μm	2~10
Chemical Purity	%	99.99995
Heat Capacity	J·kg-1 ·K-1	640
Sublimation Temperature	℃	2700
Felexural Strength	MPa (RT 4-point)	415
Young’ s Modulus	Gpa (4pt bend, 1300℃)	430
Thermal Expansion (C.T.E)	10-6K-1	4.5
Thermal conductivity	(W/mK)	300

Features of RTP/RTA SiC Coating Carrier

High purity SiC coated graphite
Superior heat resistance & thermal uniformity
Fine SiC crystal coated for a smooth surface
High durability against chemical cleaning
Material is designed so that cracks and delamination do not occur.