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    • China Silicon Wafer Heater Manufacturers, Suppliers, Factory

    Semicorex has been producing Silicon Wafer Heater for many years and is one of the professional Silicon Wafer Heater manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Silicon Carbide ICP Etching Carrier

      Silicon Carbide ICP Etching Carrier

      Looking for a reliable wafer carrier for etching processes? Look no further than Semicorex's Silicon Carbide ICP Etching Carrier. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
    • MOCVD Susceptors

      MOCVD Susceptors

      Semicorex’s MOCVD Susceptors epitomize the pinnacle of craftsmanship, endurance, and reliability for intricate graphite epitaxy and precise wafer handling tasks. These susceptors are renowned for their high density, exceptional flatness, and superior thermal control, making them the premier choice for demanding manufacturing environments. We at Semicorex are dedicated to manufacturing and supplying high-performance MOCVD Susceptors that fuse quality with cost-efficiency.
    • Ga2O3 Substrate

      Ga2O3 Substrate

      Unlock the potential of cutting-edge semiconductor applications with our Ga2O3 Substrate, a revolutionary material at the forefront of semiconductor innovation. Ga2O3, a fourth-generation wide-bandgap semiconductor, exhibits unparalleled characteristics that redefine power device performance and reliability.
    • MOCVD Susceptor for Epitaxial Growth

      MOCVD Susceptor for Epitaxial Growth

      Semicorex is a leading supplier and manufacturer of MOCVD Susceptor for Epitaxial Growth. Our product is widely used in semiconductor industries, particularly in the growth of the epitaxial layer on the wafer chip. Our susceptor is designed to be used as the center plate in MOCVD, with a gear or ring-shaped design. The product has high heat and corrosion resistance, making it stable in extreme environments.
    • Graphite Parts

      Graphite Parts

      Semicorex isostatic graphite parts are mainly used for graphite crucibles in the crystal growth process, three-petal ring high-purity graphite and TaC coating applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • Planetary Disk

      Planetary Disk

      Semicorex Planetary Disk, silicon carbide coated graphite wafer susceptor or carrier designed for Molecular Beam Epitaxy (MBE) processes within Metal-Organic Chemical Vapor Deposition (MOCVD) furnaces. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • TaC Coating

      According to the research results, TaC coating can act as a protection and isolation layer to extend graphite component life, improve radial temperature uniformity, maintain SiC sublimation stoichiometry, suppress impurity migration, and reduce energy consumption. Ultimately a TaC-coated graphite crucible set is expected to improve SiC PVT process control and product quality.

    • How is Silicon Carbide Ceramic Applied and What is its Future in Wear and High-Temperature Resistance?

      Silicon carbide (SiC) ceramics, known for their high strength, hardness, wear resistance, corrosion resistance, and high-temperature stability, have demonstrated immense potential and value across numerous industrial sectors since their introduction.

    • Thin film growth process

      Common thin films are mainly divided into three categories: semiconductor thin films, dielectric thin films, and metal/metal compound thin films.

    • What is the advantage of silicon carbide?

    • Challenges of Ion Implantation Technology in SiC and GaN Power Devices

      Wide bandgap (WBG) semiconductors such as Silicon Carbide (SiC) and Gallium Nitride (GaN) are expected to play an increasingly important role in power electronic devices. They offer several advantages over traditional Silicon (Si) devices, including higher efficiency, power density, and switching frequency. Ion implantation is the primary method for achieving selective doping in Si devices. However, there are some challenges when applying it to wide bandgap devices. In this article, we will focus on some of these challenges and summarize their potential applications in GaN power devices.

    • 3 methods of graphite molding

      The four main molding methods for graphite molding are: extrusion molding, molding, vibratory molding and isostatic molding. Most of the common carbon/graphite materials on the market are molded by hot extrusion and molding (cold or hot), and isostatic molding is a method with leading molding performance. Vibration molding is generally used to manufacture medium and coarse structural graphite, particle size between 0.5-2mm particle size, generally dominated by di-roasted graphitized products, density between 1.55-1.75kg/m³, coarser particles, rougher surface, can not be used for precision machining. It is mainly used in chemical industry and metal smelting.

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