3C-SiC Wafer Substrate

Semicorex 3C-SiC wafer substrate is made of SiC with cubic crystal. We have been manufacturer and supplier of semiconductor wafers for many years. We look forward to becoming your long-term partner in China.

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Product Description

3C-SiC (cubic silicon carbide) wafer substrate refers to a specific type of silicon carbide crystal structure that is commonly used as a substrate material in the field of semiconductor device manufacturing. It is an alternative to other silicon-based substrates, such as silicon (Si) or silicon germanium (SiGe), due to its superior material properties.

3C-SiC wafer substrate with the high thermal conductivity, which is second only to diamond. Silicon carbide is known for its excellent thermal conductivity, high breakdown electric field strength, and wide bandgap, which make it well-suited for applications in power electronics, high-temperature devices, and high-frequency devices.