Silicon Carbide Wafer Epitaxy Technology

Silicon Carbide generally uses the PVT method, with a temperature of more than 2000 degrees, a long processing cycle, and low output, so the cost of Silicon Carbide substrates is very high. The epitaxial process of Silicon Carbide is basically the same as that of Silicon, except for the temperature design and the structural design of the equipment. In terms of device preparation, due to the particularity of the material, the device process is different from Silicon in that it uses high-temperature processes, including high-temperature ion implantation, high-temperature oxidation, and high-temperature annealing processes.

If you want to maximize the characteristics of Silicon Carbide itself, the most ideal solution is to grow an epitaxial layer on a Silicon Carbide single crystal substrate. A Silicon Carbide epitaxial wafer refers to a Silicon Carbide wafer on which a single crystal thin film (epitaxial layer) with certain requirements and the same crystal as the substrate is grown on a Silicon Carbide substrate.

There are four major companies in the market for the main equipment of Silicon Carbide epitaxial materials:

[1] Aixtron in Germany: characterized by relatively large production capacity;

[2] LPE in Italy, which is a single-chip microcomputer with a very high growth rate;

[3] TEL and Nuflare in Japan, whose equipment is very expensive, and secondly, the dual-cavity, which has a certain effect on increasing production. Among them, Nuflare is a very distinctive device launched in recent years. It can rotate at high speed, up to 1,000 revolutions per minute, which is very beneficial to the uniformity of epitaxy. At the same time, its airflow direction is different from other equipment, which is vertically downward, so it can avoid the generation of some particles and reduce the probability of dripping onto the wafer.

From the perspective of the terminal application layer, Silicon Carbide materials have a wide range of applications in high-speed rail, automotive electronics, smart grid, photovoltaic inverter, industrial electromechanical, data center, white goods, consumer electronics, 5G communication, next-generation display and other fields, and the market potential is huge.

Semicorex offers high-quality CVD SiC coating parts for SiC epitaxial growth. If you have any inquiries or need additional details, please don't hesitate to get in touch with us.

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