Wafer Carrier

· Excellent thermal conductivity: facilitating efficient heat transfer, essential during semiconductor epitaxial growth processes.

· High-temperature resistance: the SiC coating withstands extreme heat environments, ensuring the carrier maintains its performance throughout the thermal cycling in the reactor.

· Chemical corrosion resistance: the SiC coating significantly improves the carrier's resistance to oxidation and corrosion from reactive gases often encountered during epitaxy.

· Dimensional stability: the combination of SiC and graphite ensures the carrier retains its shape and precision over time, minimizing the risk of deformation during long process runs.

Applications in Semiconductor Epitaxy Growth

Epitaxy is a process where a thin layer of semiconductor material is deposited onto a substrate, typically a wafer, to form a crystal lattice structure. During this process, precision wafer handling is critical, as even minor deviations in wafer positioning can result in defects or variations in the layer structure.

The Wafer Carrier plays a key role in ensuring that semiconductor wafers are securely held and properly positioned during this process. The combination of SiC-coated graphite delivers the required performance characteristics for silicon carbide (SiC) epitaxy, a process that involves growing high-purity SiC crystals for use in power electronics, optoelectronics, and other advanced semiconductor applications.

Specifically, the Wafer Carrier:

· Provides precise wafer alignment: Ensuring uniformity in the growth of the epitaxial layer across the wafer, which is critical for device yield and performance.

· Withstands thermal cycles: SiC-coated graphite remains stable and reliable, even in high-temperature environments up to 2000°C, ensuring consistent wafer handling throughout the process.

· Minimizes wafer contamination: The high-purity material composition of the carrier ensures that the wafer is not exposed to unwanted contaminants during the epitaxial growth process.

In semiconductor epitaxy reactors, the Wafer Carrier is placed within the reactor chamber, where it functions as a support platform for the wafer. The carrier allows the wafer to be exposed to high temperatures and reactive gases used in the epitaxial growth process without compromising the integrity of the wafer. The SiC coating prevents chemical interactions with the gases, ensuring the growth of high-quality, defect-free material.

Advantages of SiC Coated Graphite Wafer Carrier

1. Enhanced Durability: The SiC coating increases the wear resistance of the graphite material, reducing the risk of degradation over multiple uses.

2. High-Temperature Stability: The Wafer Carrier can tolerate the extreme temperatures common in epitaxial growth furnaces, maintaining its structural integrity without warping or cracking.

3. Improved Yield and Process Efficiency: By ensuring the wafers are handled securely and consistently, the SiC-coated graphite Wafer Carrier helps improve the overall yield and efficiency of the epitaxial growth process.

4. Customization Options: The carrier can be customized in terms of size and configuration to meet the specific needs of different epitaxial reactors, providing flexibility for a wide range of semiconductor applications.

Semicorex SiC-coated graphite Wafer Carrier is a crucial component in the semiconductor industry, providing an optimal solution for wafer handling during the epitaxial growth process. With its combination of thermal stability, chemical resistance, and mechanical strength, it ensures the precise and reliable handling of semiconductor wafers, leading to higher-quality results and improved yield in epitaxy processes. Whether for silicon carbide epitaxy or other advanced semiconductor applications, this Wafer Carrier offers the durability and performance required to meet the exacting standards of modern semiconductor manufacturing.