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  • SiC Coated Graphite Wafer Carrier

    • China SiC Coated Graphite Wafer Carrier Manufacturers, Suppliers, Factory

    Semicorex has been producing SiC Coated Graphite Wafer Carrier for many years and is one of the professional SiC Coated Graphite Wafer Carrier manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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      Ceramic Axle Sleeve

      Semicorex provides semiconductor-grade ceramics for your OEM semi fabrication tools and wafer handling components. We have been manufacturer and supplier of silicon carbide coating film for many years. Our Ceramic Axle Sleeve has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • Graphite Thermal Field

      Graphite Thermal Field

      Semicorex Graphite Thermal Field combines cutting-edge material science with a deep understanding of crystal growth processes, it delivers innovative a solution that empowers the semiconductor industry to achieve new levels of performance, efficiency, and cost-effectiveness.**
    • Blue Green LED Epitaxial Susceptor

      Blue Green LED Epitaxial Susceptor

      Semicorex Blue Green LED Epitaxial Susceptors make the manufacture of high-quality LED wafers more efficient. We have been manufacturer and supplier of silicon carbide coated susceptor for many years. Our Blue Green LED Epitaxial Susceptor has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • SiC Coated Epitaxial Reactor Barrel

      SiC Coated Epitaxial Reactor Barrel

      The Semicorex SiC Coated Epitaxial Reactor Barrel is a top-quality graphite product coated with high-purity SiC. Its excellent density and thermal conductivity make it an ideal choice for use in LPE processes, providing exceptional heat distribution and protection in corrosive and high-temperature environments.
    • SiC Disc Susceptor

      SiC Disc Susceptor

      Semicorex introduces its SiC Disc Susceptor, designed to elevate the performance of Epitaxy, Metal-Organic Chemical Vapor Deposition (MOCVD), and Rapid Thermal Processing (RTP) equipment. The meticulously engineered SiC Disc Susceptor provides with properties that guarantee superior performance, durability, and efficiency in high-temperature and vacuum environments.**
    • 850V High Power GaN-on-Si Epi Wafer

      850V High Power GaN-on-Si Epi Wafer

      Semicorex provides 850V High Power GaN-on-Si Epi Wafer. Compared to other substrates for HMET power devices, 850V High Power GaN-on-Si Epi Wafer enables larger sizes and more diversified applications, and can be quickly introduced into the mainstream fabs' silicon-based chip. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Related Blog
    • Reviews

    • What is P-type SiC wafer?

      A P-type silicon carbide (SiC) wafer is a semiconductor substrate that is doped with impurities to create a P-type (positive) conductivity. Silicon carbide is a wide-bandgap semiconductor material that offers exceptional electrical and thermal properties, making it suitable for high-power and high-temperature electronic devices.

    • The Crucial Role of Epitaxial Layers in Semiconductor Devices

      Epitaxial growth refers to the process of growing a crystallographically well-ordered monocrystalline layer on a substrate. Generally speaking, epitaxial growth involves the cultivation of a crystal layer on a single-crystal substrate, with the grown layer sharing the same crystallographic orientation as the original substrate. Epitaxy is extensively utilized in semiconductor manufacturing, such as the production of epitaxial silicon wafers in the integrated circuit industry.

    • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

      Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

    • Begin Production of 3C-SiC Wafer

      The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

    • Understanding the Etching Differences Between Silicon and Silicon Carbide Wafers

      Etching Process: Silicon vs. Silicon Carbide

    • What is the advantage of silicon carbide?

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