What is SOI

Silicon-on-insulator (SOI) is recognized as one of the solutions for replacing existing monocrystalline silicon materials in the nanotechnology era and is a major tool for maintaining Moore's Law trend. Silicon-on-insulator, a substrate technology that replaces traditional bulk substrate silicon with an "engineered" substrate, has been used for more than 30 years in specialized applications such as military and space electronics systems, where SOI has unique advantages due to its excellent radiation resistance and high-speed characteristics.

SOI materials are the foundation for the development of SOI technology, and the development of SOI technology depends on the continuous advancement of SOI materials. The lack of low-cost, high-quality SOI materials has been the primary constraint for SOI technology to enter large scale industrial production. In recent years, with the maturity of SOI material preparation technology, the material problem that restricts the development of SOI technology is gradually being solved, which ultimately includes two types of SOI material preparation technology, namely, Speration-by-oxygen implantation (SIMOX) and bonding technology. The bonding technology includes the traditional Bond and Etch back (BESOI) technology and the Smart-cut technology combining hydrogen ion injection and bonding proposed by M. Bruel, one of the founders of SOITEC in France, as well as the Simbond SOI material preparation combining oxygen isolation and bonding proposed by Dr. Meng Chen in 2005. The new technology combines oxygen injection isolation and bonding.