Applications of Gallium Oxide Wafer

Gallium oxide (Ga₂O₃) has emerged as a promising material for various applications, particularly in power devices and radio frequency (RF) devices. In this article, we explore the key opportunities and target markets for gallium oxide in these domains.

Power Devices

1. Four Major Opportunities for Gallium Oxide in Power Devices

a. Unipolar Replacement of Bipolar: Gallium oxide is positioned to replace traditional bipolar devices, such as MOSFETs replacing IGBTs. In markets like new energy vehicles, charging stations, ultra-high voltage applications, fast charging, industrial power supplies, and motor control, the phase-out of silicon-based IGBTs is inevitable. Gallium oxide, along with silicon carbide (SiC) and GaN, stands as a competitive material.

b. Enhanced Energy Efficiency: Gallium oxide power devices exhibit lower energy consumption, aligning with global strategies for carbon neutrality and peak carbon emissions reduction.

c. Scalable Mass Production: The ease of increasing the diameter of gallium oxide wafers, coupled with simplified production processes and cost-effectiveness, positions it favorably for large-scale production.

d. High Reliability Requirements: With stable material properties and reliable structures, gallium oxide power devices meet the stringent demands for high-quality substrates/epitaxial layers.

2. Target Markets for Gallium Oxide Power Devices

a. Long-Term Outlook: Gallium oxide power devices are expected to cover voltage ranges of 650V/1200V/1700V/3300V by 2025-2030, penetrating extensively into automotive and electrical equipment sectors. Future opportunities lie in exclusive markets requiring extremely high voltage, such as applications in high-voltage power supply vacuum tubes.

b. Short-Term Outlook: In the short term, gallium oxide power devices are likely to make early appearances in the mid-to-high voltage markets with lower entry barriers and cost sensitivity. This includes sectors like consumer electronics, household appliances, and industrial power supplies that benefit from the material's high reliability and performance.

3. Markets Where Gallium Oxide Holds Advantage

New Energy Vehicle Onboard Chargers/Inverters/Charging Stations

DC/DC Converters: 12V/5V→48V Conversion

Replacement of Existing IGBTs in Stocked Markets

RF Devices

The success of Gallium Nitride (GaN) in the RF market relies on large-sized, low-cost substrates to fully leverage its material advantages. While homogenous substrates yield the highest epitaxial layer quality, cost considerations often lead to the use of relatively inexpensive substrates like Si, sapphire, and SiC in LED, consumer electronics, and RF applications. However, the lattice mismatch between these substrates and GaN can compromise epitaxial quality.

With only a 2.6% lattice mismatch between GaN and gallium oxide, using gallium oxide substrates for GaN growth results in high-quality epitaxial layers. Moreover, the cost of growing 6-inch gallium oxide wafers without using expensive iridium-based methods is comparable to silicon, making gallium oxide a promising candidate for critical applications like GaN RF devices.

In conclusion, gallium oxide's versatility positions it as a key player in both power and RF devices, with significant potential in various markets and applications. As technology continues to advance, gallium oxide is expected to play a crucial role in shaping the future of these industries.