English
Home > Products > Silicon Carbide Coated Epitaxial Sheet Tray

China Silicon Carbide Coated Epitaxial Sheet Tray Manufacturers, Suppliers, Factory

Our well-equipped facilities and excellent quality control throughout all stages of production enables us to guarantee total customer satisfaction for Silicon Carbide Coated Epitaxial Sheet Tray,RTP/RTA Carrier,SiC-Coated CVD Susceptor,SiC Coating RTP Carrier Tray,Graphite Wafer Tray, We have experienced manufacturing facilities with more than 100 employees. So we can guarantee short lead time and quality assurance.
Silicon Carbide Coated Epitaxial Sheet Tray, During in 11 years, We have participated in more than 20 exhibitions, obtains the highest praise from each customer. Our company has been devoting that "customer first" and committed to helping customers expand their business, so that they become the Big Boss !

Related Products

Hot Products

  • Semiconductor Wafer Chuck

    Semiconductor Wafer Chuck

    Semicorex advanced, high-purity Silicon Carbide Coated Components are built to withstand the extreme environments in wafer handling process. Our Semiconductor Wafer Chuck has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • 4 Inch N-type SiC Substrate

    4 Inch N-type SiC Substrate

    Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our 4 Inch N-type SiC Substrate has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
  • Diffusion Tube

    Diffusion Tube

    Semicorex cutting-edge Diffusion Tube, crafted from high-quality semiconductor grade quartz—a pinnacle in semiconductor processing technology. Engineered to precision, this indispensable component redefines the standards of diffusion processes in the semiconductor industry. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • CVD and CVI Vacuum Furnace

    CVD and CVI Vacuum Furnace

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated products in China. We provide custom furnace solutions. Our CVD and CVI Vacuum Furnace has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • Silicon Epitaxial Deposition In Barrel Reactor

    Silicon Epitaxial Deposition In Barrel Reactor

    If you need a high-performance graphite susceptor for use in semiconductor manufacturing applications, the Semicorex Silicon Epitaxial Deposition In Barrel Reactor is the ideal choice. Its high-purity SiC coating and exceptional thermal conductivity provide superior protection and heat distribution properties, making it the go-to choice for reliable and consistent performance in even the most challenging environments.
  • Tantalum Carbide Halfmoon Part

    Tantalum Carbide Halfmoon Part

    Semicorex Tantalum Carbide Halfmoon Part is a crucial component utilized in the semiconductor epitaxy process, a critical stage in the manufacturing of semiconductor devices. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
  • Related Blog
  • Reviews

  • Understanding Chemical Vapor Deposition (CVD): A Comprehensive Overview

    Chemical Vapor Deposition (CVD) is a versatile thin-film deposition technique widely employed in the semiconductor industry for fabricating high-quality, conformal thin films on various substrates. This process involves chemical reactions of gaseous precursors onto a heated substrate surface, resulting in the formation of a solid thin film. This article delves into the intricacies of CVD, exploring its mechanisms, advantages, limitations, and key applications in semiconductor manufacturing.

  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • Infineon Unveils World’s First 300mm Power GaN Wafer

    Recently, Infineon Technologies announced the successful development of the world’s first 300mm power Gallium Nitride (GaN) wafer technology.

  • The Surge and Outlook of the Silicon Carbide (SiC) Power Device Market

    As global acceptance of electric vehicles gradually increases, Silicon Carbide (SiC) will encounter novel growth opportunities in the forthcoming decade. It is anticipated that manufacturers of power semiconductors and operators in the automotive industry will participate more actively in the construction of this sector’s value chain.

  • What is Low Temperature Plasma Etching?

    Plasma is the fourth state of matter, and it plays a crucial role in both industrial applications and natural phenomena.

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept