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  • SiC Wafer Holder for RTP

    • China SiC Wafer Holder for RTP Manufacturers, Suppliers, Factory

    Semicorex has been producing SiC Wafer Holder for RTP for many years and is one of the professional SiC Wafer Holder for RTP manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • Susceptor Disc

      Susceptor Disc

      The Semicorex Susceptor Disc is an indispensable tool in Metal-Organic Chemical Vapor Deposition (MOCVD), specifically engineered for supporting and heating semiconductor wafers during the critical process of epitaxial layer deposition. The Susceptor Disc is instrumental in the manufacturing of semiconductor devices, where precise layer growth is paramount. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
    • SiC Seal Ring

      SiC Seal Ring

      Semicorex provide high-quality SiC seal ring with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • Quartz 12 inch Outer Tube

      Quartz 12 inch Outer Tube

      Semicorex Quartz 12 Inch Outer Tube is a specialized component meticulously designed for use in the semiconductor industry, where precision, reliability, and high performance are paramount. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China*.
    • Alumina Ceramic Vacuum Chuck

      Alumina Ceramic Vacuum Chuck

      Semicorex Alumina Ceramic Vacuum Chuck is applied in the wafer thinning and grinding processes of semiconductor manufacturing, serving as an indispensable tool for achieving high-precision and reliable semiconductor production.**
    • SOI Wafers

      SOI Wafers

      Semicorex SOI Wafers represent a critical advancement in this field, offering numerous advantages over traditional silicon wafers. At Semicorex, we are proud to manufacture and supply SOI wafers that meet the rigorous demands of modern semiconductor applications.*
    • Epi-SiC Susceptor

      Epi-SiC Susceptor

      Semicorex Epi-SiC Susceptor, a component engineered with meticulous attention to detail, is indispensable for cutting-edge semiconductor fabrication, especially in epitaxial applications. The Epi-SiC Susceptor’s design, which embodies precision and innovation, supports the epitaxial deposition of semiconductor materials on wafers, ensuring exceptional efficiency and dependability in performance. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.
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      In their newly released annual report, TSMC Chairman Deyin Liu and CEO Chieh-Jia Wei revealed the progress related to the 2nm process.

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      As technology nodes continue to shrink, the formation of ultra-shallow junctions presents significant challenges. Thermal annealing processes including Rapid thermal annealing (RTA) and flash lamp annealing (FLA) are vital techniques that maintain high impurity activation rates while minimizing diffusion, ensuring optimal device performance.

    • Silicon Carbide(SiC) Crystal Growth Furnace

      Crystal growth is the core link in the production of Silicon Carbide substrates, and the core equipment is the crystal growth furnace. Similar to traditional crystalline silicon-grade crystal growth furnaces, the furnace structure is not very complex and mainly consists of a furnace body, a heating system, a coil transmission mechanism, a vacuum acquisition and measurement system, a gas path system, a cooling system, a control system, etc., among which Thermal field and process conditions determine the quality, size, conductive properties and other key indicators of Silicon Carbide crystals.

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    • Knowing GaN

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