MOCVD Heater

This heater is constructed using high-purity graphite, with impurity levels meticulously controlled to less than 5 parts per million (ppm). The graphite is then coated with chemical vapor deposition (CVD) silicon carbide (SiC), boasting a purity level exceeding 99.99995%. This combination of materials endows the heater with a unique set of properties that are indispensable for achieving optimal performance in metal-organic chemical vapor deposition (MOCVD) processes.

One of the most remarkable features of the Semicorex MOCVD Heater is its exceptional chemical purity. The high-purity graphite core significantly minimizes the introduction of contaminants during high-temperature processes, ensuring the deposition of ultra-clean thin films. The CVD SiC coating further enhances this purity, providing a robust barrier against chemical interactions that could compromise the integrity of the deposited layers. This high level of chemical purity is crucial for producing semiconductor devices with superior performance and reliability.

Moreover, the heater is highly robust and thermally efficient, capable of withstanding the extreme thermal conditions typical of MOCVD processes. The inherent properties of SiC, such as its high melting point and thermal conductivity, contribute to the heater’s ability to efficiently manage and distribute heat. This thermal efficiency ensures uniform heating across the substrate, which is essential for achieving homogeneous film deposition and minimizing thermal gradients that could lead to defects.

Electrical conductivity is another area where the Semicorex MOCVD Heater excels. The high-purity graphite core provides excellent electrical conductivity, allowing the heater to handle high electrical loads with ease. This capability is particularly important in MOCVD processes that require precise control over temperature and deposition rates. The heater’s ability to maintain stable electrical performance under high loads ensures consistent and reproducible process conditions, which are vital for high-yield semiconductor manufacturing.

The flat surface of the heater is meticulously designed to provide higher emissivity towards the substrate, enhancing the efficiency of radiative heat transfer. This design feature ensures that the substrate receives uniform heating, which is critical for achieving high-quality thin films with consistent thickness and properties. The high emissivity surface also contributes to the overall thermal efficiency of the heater, reducing energy consumption and operational costs.

In terms of durability, the Semicorex MOCVD Heater offers exceptional corrosion resistance, inoxidizability, and high mechanical strength. The CVD SiC coating provides a robust protective layer that resists corrosive gases and chemicals commonly encountered in MOCVD processes. This corrosion resistance extends the operational lifespan of the heater, reducing maintenance and replacement costs. The heater’s inoxidizability ensures that it remains stable and does not degrade even at high temperatures, preserving its performance and structural integrity over long operational periods.

Finally, the heater’s high mechanical strength ensures that it can withstand the physical stresses associated with thermal cycling and substrate handling. This robustness minimizes the risk of mechanical failure, ensuring reliable and continuous operation.