English
Home > Products> mocvd heater

China mocvd heater Manufacturers, Suppliers, Factory

Semicorex has been producing mocvd heater for many years and is one of the professional mocvd heater manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

Related Products

Hot Products

  • RTP Carrier for MOCVD Epitaxial Growth

    RTP Carrier for MOCVD Epitaxial Growth

    Semicorex RTP Carrier for MOCVD Epitaxial Growth is ideal for semiconductor wafer processing applications, including epitaxial growth and wafer handling processing. Carbon graphite susceptors and quartz crucibles are processed by MOCVD on the surface of graphite, ceramics, etc. Our products have a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • TaC Coated Tube

    TaC Coated Tube

    Semicorex TaC Coated Tube represents a pinnacle of material science, engineered to withstand the extreme conditions encountered in advanced semiconductor fabrication. Created by applying a dense, uniform layer of TaC onto a high-purity isotropic graphite substrate via Chemical Vapor Deposition (CVD), the TaC Coated Tube offers a compelling combination of properties that surpass conventional materials in demanding high-temperature and chemically aggressive environments.**
  • ICP Plasma Etching Plate

    ICP Plasma Etching Plate

    Semicorex's ICP Plasma Etching Plate provides superior heat and corrosion resistance for wafer handling and thin film deposition processes. Our product is engineered to withstand high temperatures and harsh chemical cleaning, ensuring durability and longevity. With a clean and smooth surface, our carrier is perfect for handling pristine wafers.
  • Wafer Process Heater

    Wafer Process Heater

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our Wafer Process Heater has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner.
  • SiC Coated Graphite Lid Cover

    SiC Coated Graphite Lid Cover

    Unlock the epitome of performance and durability in the realm of semiconductor equipment with our cutting-edge SiC Coated Graphite Lid Cover. This disc-shaped component is expertly designed for various semiconductor applications, offering a unique combination of graphite and Silicon Carbide (SiC) coating to enhance functionality and efficiency. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • SiC Coated Wafer Heater

    SiC Coated Wafer Heater

    Semicorex is a leading independently owned manufacturer of Silicon Carbide Coated Graphite, Precision Machined High Purity Graphite focusing on the Silicon Carbide Coated Graphite, Silicon Carbide Ceramic, MOCVP areas of semiconductor manufacturing. Our SiC Coated Wafer Heater has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • Related Blog
  • Reviews

  • What is a MOCVD system?

  • Application of carbon fiber composite

    Carbon fiber (CF) is a type of fibrous material that contains over 95% carbon.

  • About defects in SiC crystals - Micropipe

    SiC substrate can have microscopic defects, such as Threading Screw Dislocation (TSD), Threading Edge Dislocation (TED), Base Plane Dislocation (BPD), and others. These defects are caused by deviations in the arrangement of atoms at the atomic level. SiC crystals may also have macroscopic dislocations, like Si or C inclusions, micropipe, hexagonal voids, polymorphs, etc. These dislocations are typically large in size.

  • Silicon Carbide Ceramics and Their Diverse Fabrication Processes

    This paper provides a comprehensive overview of the various manufacturing techniques employed to produce dense SiC ceramics, highlighting their unique characteristics and applications.

  • Introduction to Silicon Carbide Power Devices

    Silicon carbide (SiC) power devices are semiconductor devices made of silicon carbide materials, mainly used in high-frequency, high-temperature, high-voltage and high-power electronic applications. Compared with traditional silicon (Si)-based power devices, silicon carbide power devices have higher bandgap width, higher critical breakdown electric field, higher thermal conductivity and higher saturated electron drift velocity, which makes them have great development potential and application value in the field of power electronics.

  • Gallium Nitride Epitaxial Wafers: An Introduction to the Fabrication Process

    Gallium Nitride (GaN) epitaxial wafer growth is a complex process, often utilizing a two-step method. This method involves several critical stages, including high-temperature baking, buffer layer growth, recrystallization, and annealing. By meticulously controlling the temperature throughout these stages, the two-step growth method effectively prevents wafer warping caused by lattice mismatch or stress, making it the predominant fabrication method for GaN epitaxial wafers globally.

Related Search

MOCVD Heater

Send Inquiry

Hit enter to search or ESC to close
X
We use cookies to offer you a better browsing experience, analyze site traffic and personalize content. By using this site, you agree to our use of cookies. Privacy Policy
Reject Accept