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Graphite Heater, In order to make more people know our items and to enlarge our market, we've got devoted a lot of attention to technical innovations and improvement, as well as replacement of equipment. Last but not the least, we also pay more attention to training our managerial personnel, technicians and workers in planned way.

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  • SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber

    SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber

    Semicorex's SiC-Coated Susceptor Barrel for Epitaxial Reactor Chamber is a highly reliable solution for semiconductor manufacturing processes, featuring superior heat distribution and thermal conductivity properties. It is also highly resistant to corrosion, oxidation, and high temperatures.
  • SiC Coated Barrel Susceptor for Wafer Epitaxial

    SiC Coated Barrel Susceptor for Wafer Epitaxial

    The Semicorex SiC Coated Barrel Susceptor for Wafer Epitaxial is the perfect choice for single crystal growth applications, thanks to its exceptionally flat surface and high-quality SiC coating. Its high melting point, oxidation resistance, and corrosion resistance make it an ideal choice for use in high-temperature and corrosive environments.
  • Silicon Carbide-Coated Graphite Barrel

    Silicon Carbide-Coated Graphite Barrel

    The Semicorex Silicon Carbide-Coated Graphite Barrel is the perfect choice for semiconductor manufacturing applications that require high heat and corrosion resistance. Its exceptional thermal conductivity and heat distribution properties make it ideal for use in LPE processes and other high-temperature environments.
  • Tantalum Carbide Coating Halfmoon Part

    Tantalum Carbide Coating Halfmoon Part

    Semicorex Tantalum Carbide Coating Halfmoon Part is a highly specialized component designed for use in the epitaxial deposition process. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • ALD Planetary Susceptor

    ALD Planetary Susceptor

    Semicorex ALD Planetary Susceptor is important in ALD equipment due to their ability to withstand harsh processing conditions, ensuring high-quality film deposition for a variety of applications. As the demand for advanced semiconductor devices with smaller dimensions and enhanced performance continues to grow, the use of the ALD Planetary Susceptor in ALD is expected to expand further.**
  • 6'' Wafer Carrier for Aixtron G5

    6'' Wafer Carrier for Aixtron G5

    Semicorex 6'' Wafer Carrier for Aixtron G5 offers a multitude of advantages for use in Aixtron G5 equipment, particularly in high-temperature and high-precision semiconductor manufacturing processes.**
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  • What is liquid phase epitaxy?

    The liquid phase method is closer to the thermodynamic equilibrium conditions and is able to grow SiC crystals with better quality.

  • Applications of Gallium Oxide Wafer

    Gallium oxide (Ga2O3) has emerged as a promising material for various applications, particularly in power devices and radio frequency (RF) devices. In this article, we explore the key opportunities and target markets for gallium oxide in these domains.

  • Silicon Carbide Substrate Core Process Flow

    Silicon carbide substrate is a compound semiconductor single crystal material composed of two elements, carbon and silicon. It has the characteristics of large bandgap, high thermal conductivity, high critical breakdown field strength, and high electron saturation drift rate.

  • Heteroepitaxy of 3C-SiC: An Overview

    The development of 3C-SiC, a significant polytype of silicon carbide, reflects the continuous advancement of semiconductor material science. In the 1980s, Nishino et al. first achieved a 4 μm thick 3C-SiC film on a silicon substrate using chemical vapor deposition (CVD)[1], laying the foundation for 3C-SiC thin-film technology.

  • Technical Challenges in Silicon Carbide Crystal Growth Furnaces

    Silicon carbide (SiC) crystal growth furnaces are the cornerstone of SiC wafer production. While sharing similarities with traditional silicon crystal growth furnaces, SiC furnaces face unique challenges due to the material’s extreme growth conditions and complex defect formation mechanisms. These challenges can be broadly categorized into two areas: crystal growth and epitaxial growth.

  • Nearly $840 Million: Onsemi Acquires a SiC Company

    Today, Onsemi announced on its official website that it has reached an agreement with Qorvo to acquire the SiC JFET technology business and Qorvo's subsidiary.

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