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  • SiC End Effector

    SiC End Effector

    Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
  • SiC Coated Plate

    SiC Coated Plate

    Semicorex SiC Coated Plate is a precision-engineered component made from graphite with a high-purity silicon carbide coating, designed for demanding epitaxial applications. Choose Semicorex for its industry-leading CVD coating technology, strict quality control, and proven reliability in semiconductor manufacturing environments.*
  • Epitaxial Susceptor

    Epitaxial Susceptor

    Semicorex Epitaxial Susceptor with SiC coating is designed to support and hold SiC wafers during the epitaxial growth process, ensuring precision and uniformity in semiconductor manufacturing. Choose Semicorex for its high-quality, durable, and customizable products that meet the rigorous demands of advanced semiconductor applications.*
  • Fused Quartz Crucibles

    Fused Quartz Crucibles

    Semicorex Fused Quartz Crucibles are high-purity containers designed for semiconductor crystal growth, offering exceptional thermal stability and contamination resistance for defect-free wafer production. Choose Semicorex for strict material purity control, precision manufacturing, and proven reliability in the world’s most demanding semiconductor processes.*
  • Fused Quartz Crucible

    Fused Quartz Crucible

    Premium Fused Quartz Crucible, meticulously crafted from semiconductor-grade quartz to meet the exacting standards of the semiconductor industry. Engineered for precision and durability, this crucible is an indispensable tool for semiconductor processing, ensuring the utmost reliability in your critical applications. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Ignition Injector

    Ignition Injector

    Semicorex Ignition Injector, is a high-purity quartz component designed for precise and contamination-free ignition in semiconductor and research applications. Choosing Semicorex ensures not only unmatched quartz material quality but also advanced fabrication expertise that guarantees reliability, safety, and stability in every critical process.*
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  • The significance of porous graphite materials to SiC crystal growth

    Semicorex's SiC crystal growth furnace component, the porous graphite barrel, will bring three major benefits and can effectively strengthen the competitiveness of domestic SiC substrates:

  • Applications of Silicon Carbide

    Among the core components of electric vehicles, automotive power modules—primarily utilizing IGBT technology—play a crucial role. These modules not only determine the key performance of the electric drive system but also account for over 40% of the cost of the motor inverter.

  • Applications of Gallium Oxide Wafer

    Gallium oxide (Ga2O3) has emerged as a promising material for various applications, particularly in power devices and radio frequency (RF) devices. In this article, we explore the key opportunities and target markets for gallium oxide in these domains.

  • CVD process for SiC wafer epitaxy

    The CVD process for SiC wafer epitaxy involves the deposition of SiC films onto a SiC substrate using a gas-phase reaction. The SiC precursor gases, typically methyltrichlorosilane (MTS) and ethylene (C2H4), are introduced into a reaction chamber where the SiC substrate is heated to a high temperature (usually between 1400 and 1600 degrees Celsius) under a controlled atmosphere of hydrogen (H2).

  • Homoepitaxy and Heteroepitaxy Explained Simply

    Homoepitaxy and heteroepitaxy play pivotal roles in material science. Homoepitaxy involves the growth of a crystalline layer on a substrate of the same material, ensuring minimal defects due to perfect lattice matching. In contrast, heteroepitaxy grows a crystalline layer on a different material substrate, which can lead to challenges like lattice mismatch. These processes are crucial in advancing semiconductor devices and thin films. For instance, heteroepitaxy significantly impacts microelectronics and quantum optics, contributing to innovations like Light Emitting Diodes.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

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