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Being supported by an advanced and specialist IT team, we could give technical support on pre-sales & after-sales services for Isostatic Graphite;heating element;heating rod;high purity graphite;graphite heater;SiC Heater;CVD SiC;SiC coating;CVD furnace;vacuum furnace, The concept of our company is "Sincerity, Speed, Service, and Satisfaction". We'll follow this concept and win far more and much more customers' pleasure.
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    Semicorex's SiC-Coated ICP Component is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a fine SiC crystal coating, our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance.
  • Silicon Carbide Wafer Grinding Wheel

    Silicon Carbide Wafer Grinding Wheel

    Experience the epitome of precision in semiconductor wafer surface refinement with our cutting-edge Silicon Carbide Wafer Grinding Wheel. This disc-shaped component, meticulously designed for semiconductor equipment, redefines the standards of surface grinding, ensuring optimal results for semiconductor wafers. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • Baffle Wafer Boat

    Baffle Wafer Boat

    Semicorex Baffle Wafer Boat is a highly advanced piece of equipment used in semiconductor processing. It has been meticulously designed to ensure the delicate wafers are kept safe during the critical stages of production. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
  • MOCVD Susceptors

    MOCVD Susceptors

    Semicorex’s MOCVD Susceptors epitomize the pinnacle of craftsmanship, endurance, and reliability for intricate graphite epitaxy and precise wafer handling tasks. These susceptors are renowned for their high density, exceptional flatness, and superior thermal control, making them the premier choice for demanding manufacturing environments. We at Semicorex are dedicated to manufacturing and supplying high-performance MOCVD Susceptors that fuse quality with cost-efficiency.
  • Graphite Heat Shield

    Graphite Heat Shield

    To ensure processing efficacy in harsh environments, Semicorex Graphite Heat Shields are made with premium graphite materials and cutting-edge manufacturing technology.
  • Impregnated Graphite

    Impregnated Graphite

    Semicorex Impregnated Graphite is a high-performance composite material created through high-pressure resin impregnated, offering exceptional strength, wear resistance, and corrosion protection for sealing and lubrication applications. Choose Semicorex for advanced impregnation technology, ultra-precise machining, and consistent material quality.*
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  • Begin Production of 3C-SiC Wafer

    The thermal conductivity of bulk 3C-SiC, recently measured, is the second-highest among inch-scale large crystals, ranking just below diamond. Silicon carbide (SiC) is a wide bandgap semiconductor extensively used in electronic applications, and it exists in various crystalline forms known as polytypes. Managing high localized heat flux is a significant challenge in power electronics, as it can lead to device overheating and long-term performance and reliability issues.

  • Porous Graphite for High Quality SiC Crystal Growth by PVT Method

    Silicon Carbide (SiC) has emerged as a key material in the field of semiconductor technology, offering exceptional properties that make it highly desirable for various electronic and optoelectronic applications. The production of high-quality SiC single crystals is crucial for advancing the capabilities of devices such as power electronics, LEDs, and high-frequency devices. In this article, we delve into the significance of porous graphite in the Physical Vapor Transport (PVT) method for 4H-SiC single crystal growth.

  • Key Parameters of Silicon Carbide (SiC) Substrates

    The Silicon Carbide (SiC) production process encompasses the preparation of substrate and epitaxy from the materials side, followed by chip design and manufacturing, device packaging, and finally, distribution to downstream application markets. Among these stages, substrate material processing is the most challenging aspect of the SiC industry. SiC substrates are both hard and brittle, making cutting, grinding, and polishing extremely difficult. This increases the likelihood of defects during processing and reduces the yield rate. Currently, major international SiC manufacturers are planning to transition from 6-inch to 8-inch SiC wafers. Overcoming the challenges associated with 8-inch substrates has become a critical benchmark for the SiC industry. This article will introduce the key parameters of SiC substrates.

  • What is Thermal Field?

    In the field of single crystal growth, the temperature distribution within the crystal growth furnace plays a critical role. This temperature distribution, commonly referred to as the thermal field, is a vital factor that influences the quality and characteristics of the crystal being grown. The thermal field can be categorized into two types: static and dynamic.

  • Synthesizing High-Purity Silicon Carbide Powder

    High-Purity Silicon Carbide Powder features exceptional wide bandgap characteristics, which make it an ideal material for manufacturing high-frequency, high-power electronic devices.

  • What is Glass-like Carbon Coating

    Semicorex offers high-quality thermal insulation felt and glass-like carbon coating.

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