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    • China Isostatic Graphite;heating element;heating rod;high purity graphite;graphite heater;SiC Heater;CVD SiC;SiC coating;CVD furnace;vacuum furnace Manufacturers, Suppliers, Factory

    Semicorex has been producing Isostatic Graphite;heating element;heating rod;high purity graphite;graphite heater;SiC Heater;CVD SiC;SiC coating;CVD furnace;vacuum furnace for many years and is one of the professional Isostatic Graphite;heating element;heating rod;high purity graphite;graphite heater;SiC Heater;CVD SiC;SiC coating;CVD furnace;vacuum furnace manufacturers and Suppliers in China. Once you buy our advanced and durable products which supply bulk packing, we guarantee the large quantity in quick delivery. Over the years, we have provided customers with customized service. Customers are satisfied with our products and excellent service. We sincerely look forward to becoming your reliable long-term business partner! Welcome to buy products from our factory.

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    • 4 Inch N-type SiC Substrate

      4 Inch N-type SiC Substrate

      Semicorex provides various types of 4H and 6H SiC wafers. We have been manufacturer and supplier of silicon carbide products for many years. Our 4 Inch N-type SiC Substrate has a good price advantage and cover most of the European and American markets. We look forward to becoming your long-term partner in China.
    • SiC Seal Ring

      SiC Seal Ring

      Semicorex provide high-quality SiC seal ring with customized service. Semicorex is committed to providing quality products at competitive prices, we look forward to becoming your long-term partner in China.
    • SiC End Effector

      SiC End Effector

      Semicorex is a large-scale manufacturer and supplier of Silicon Carbide Coated Graphite Susceptor in China. We focus on semiconductor industries such as silicon carbide layers and epitaxy semiconductor. Our SiC End Effector has a good price advantage and cover many of the European and American markets. We look forward to becoming your long-term partner in China.
    • SOI Wafers

      SOI Wafers

      Semicorex SOI Wafers represent a critical advancement in this field, offering numerous advantages over traditional silicon wafers. At Semicorex, we are proud to manufacture and supply SOI wafers that meet the rigorous demands of modern semiconductor applications.*
    • SiC-Coated ICP Component

      SiC-Coated ICP Component

      Semicorex's SiC-Coated ICP Component is designed specifically for high-temperature wafer handling processes such as epitaxy and MOCVD. With a fine SiC crystal coating, our carriers provide superior heat resistance, even thermal uniformity, and durable chemical resistance.
    • Semiconductor Wafer Carrier for MOCVD Equipment

      Semiconductor Wafer Carrier for MOCVD Equipment

      You can rest assured to buy Semiconductor Wafer Carrier for MOCVD Equipment from our factory. Semiconductor wafer carriers are an essential component of MOCVD equipment. They are used to transport and protect semiconductor wafers during the manufacturing process. Semiconductor Wafer Carriers for MOCVD Equipment are made of high-purity materials and are designed to maintain the integrity of the wafers during processing.
    • Related Blog
    • Reviews

    • What is quartz?

      Quartz (SiO₂) material is very similar to glass at first glance, but the special thing is that the general glass is made up of many components (such as quartz sand, borax, boric acid, barite, barium carbonate, limestone, feldspar, soda ash, etc.), while the quartz contains only SiO₂ components, and the microstructure of its silicon dioxide tetrahedral structural units composed of a simple network.

    • Introduction to the Silicon Carbide Ion Implantation and Annealing Process

      In traditional silicon power device fabrication, high-temperature diffusion and ion implantation stand as the primary methods for dopant control, each with its advantages and disadvantages. Typically, high-temperature diffusion is characterized by its simplicity, cost-effectiveness, isotropic dopant distribution profiles, and lower introduction of lattice damage. Conversely, ion implantation, though complex and costly, enables precise independent control over dopant concentration and depth but introduces a significant number of point defects and extended defects into the substrate.

    • What are SiC-coated graphite susceptors?

      The tray (base) that supports SiC wafers, also known as a "susceptor," is a core component of semiconductor manufacturing equipment. And what exactly is this susceptor that carries the wafers?

    • Why Use Ultrasonic Cleaning in Semiconductor Manufacturing

      When cleaning wafers, ultrasonic cleaning and megasonic cleaning are commonly used to remove particles from the wafer surface.

    • What is the advantage of silicon carbide?

    • Core Material for SiC Growth: Tantalum Carbide Coating

      The current third-generation semiconductors are primarily based on Silicon Carbide, with substrates accounting for 47% of device costs, and epitaxy accounting for 23%, totaling approximately 70% and forming the most crucial part of the SiC device manufacturing industry.

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