Epitaxial Single-crystal Si Plate

A paramount attribute of the Epitaxial Single-crystal Si Plate lies in its superior density. The integration of a graphite substrate with a silicon carbide coating yields a comprehensive density that is adept at shielding against the rigorous conditions encountered in high-temperature and corrosive environments. Moreover, the silicon carbide-coated susceptor, tailored for the synthesis of single crystals, boasts an exceptionally even surface profile – a critical determinant for the sustained production of wafers of impeccable quality.

Equally pivotal to our product’s design is the mitigation of thermal expansion discrepancies between the graphite core and its silicon carbide covering. Such an innovation augments adhesive robustness markedly, thus circumventing the phenomena of fissures and stratification. In sync with this, Epitaxial Single-crystal Si Plate exhibit elevated thermal conductivity, paired with a commendable propensity for uniform heat allocation – factors that are instrumental in achieving homogeneity of temperature during the production cycle.

Moreover, the Epitaxial Single-crystal Si Plate demonstrates commendable resilience to oxidative and corrosive degradation at elevated temperatures, underpinning its longevity and dependability. Its threshold for thermal endurance is underscored by a significant melting point, thereby assuring its capacity to endure the demanding thermal milieu intrinsic to proficient semiconductor fabrication