Single-crystal Silicon Epi Susceptor

The Single-crystal Silicon Epi Susceptor is an essential component designed for Si-GaN epitaxy processes, which can be tailored to individualized specifications and preferences, providing a bespoke solution that aligns perfectly with specific requirements. Whether it entails modifications in dimensions or adjustments in coating thickness, we possess the capability to design and deliver a product that accommodates diverse process parameters, thereby optimizing performance for targeted applications. Semicorex’s commitment to market-leading quality, allied with competitive fiscal considerations, cements our eagerness to establish partnerships in fulfilling your semiconductor wafer conveyance requisites.

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Product Description

The susceptors in epitaxial growth processing necessitate the ability to withstand elevated temperatures and endure rigorous chemical cleansing procedures. The Single-crystal Silicon Epi Susceptor has been meticulously engineered to cater specifically to these exacting demands encountered in epitaxy equipment applications.

These susceptors boast a construction comprising high-purity silicon carbide (SiC) coated graphite, which imparts unparalleled resistance to heat, ensuring uniform thermal distribution for consistent epitaxy layer thickness and resistance.

Additionally, the Single-crystal Silicon Epi Susceptor exhibits remarkable durability against harsh chemical cleaning agents. The utilization of fine SiC crystal coating further contributes to a pristine, smooth surface, which is of paramount importance for effective handling, as the unsullied wafers come into contact with the susceptor across numerous points throughout their entire surface area.

The utilization of the Single-crystal Silicon Epi Susceptor ensures unwavering dependability and extended lifespan, mitigating the need for frequent replacements and subsequently minimizing both downtime and maintenance expenses. Its sturdy construction and exceptional operational capabilities significantly contribute to heightened process efficiency, ultimately bolstering productivity and cost-effectiveness within the realm of semiconductor manufacturing operations.