Semicorex technology for Specialty Graphite

High-performance isostatic graphite materials are vital in various high-end industrial manufacturing sectors and serve as key foundational components for advancing the third-generation semiconductor industry, particularly in silicon carbide (SiC) production. As the global semiconductor market surges, the semiconductor materials market is positioned for significant growth. The performance and quality of isostatic graphite materials directly influence the quality, defect control, specifications, and grades of silicon carbide crystals, making them indispensable in semiconductor manufacturing.

One-step Method

Semicorex stands at the forefront of innovation with its “One-step method” (self-sintering method) for preparing high-performance graphite materials, which significantly outperforms traditional binary methods. Our products not only match but often exceed the performance indicators of the world’s leading graphite materials.

The “One-step method” streamlines the manufacturing process into four essential steps: customized raw material production, isostatic pressing, roasting, and graphitization. By eliminating the cumbersome and time-intensive processes of powdering, kneading, and impregnation seen in traditional methods, we have created a simplified and highly controllable preparation process. This approach results in a dramatically reduced production cycle—up to 1/3 to 1/4 of that of traditional methods—allowing for rapid product delivery within a mere two months.

Isostatic graphite materials produced by this self-sintering method demonstrate a smooth, delicate cross-section, minimal defects, high interface bonding strength, and non-fading graphite. They achieve ultra-high density, ultra-high strength, and an ultra-fine pore structure—qualities that are non-negotiable in the pursuit of excellence. Moreover, this method maximizes product homogeneity and consistency.

Performance Advantages

Semicorex’s high-performance isostatic graphite materials consistently surpass foreign products in key performance metrics. We achieve ultra-high density (1.92-1.95 g/cm³), ultra-high strength (flexural strength of 80-90 MPa), superior conductivity (resistivity of 9-10 μΩm), high thermal conductivity (140 W/mK), and ultra-fine pores (opening pore size of 0.4-0.6 microns).

These exceptional graphite materials excel in silicon carbide crystal growth and epitaxial thermal field applications, ensuring the stability of thermal environments that minimize defects and enhance the quality of SiC crystals. Their outstanding resistance to silicon vapor corrosion guarantees durability, extending the lifespan of thermal field graphite components, which effectively reduces the cost of consumables essential for SiC crystal production.

Choose Semicorex, Choose Excellence

Semicorex’s unparalleled product pathway, straightforward and controllable processes, alongside our state-of-the-art intelligent heat treatment equipment, ensure optimal temperature consistency during the structural evolution of graphite materials. This guarantees high performance, homogeneity, and consistency across all our products. Our isostatic graphite offerings are not only characterized by high density and strength but also by exceptional thermal and electrical conductivity, fiercely enhancing their market competitiveness.

As a leading upstream graphite material manufacturer in the semiconductor industry, Semicorex prioritizes the availability, usability, and durability of its materials, setting the standard for excellence in the field.